Chinese Journal of Lasers, Volume. 44, Issue 1, 102012(2017)

Behavior Characteristics of Different Crystal Surfaces of Monocrystal Silicon Under Femtosecond Laser Irradiation

Zhang Xin*, Huang Ting, and Xiao Rongshi
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  • [in Chinese]
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    Figures & Tables(6)
    Schematic of experimental setup
    (a)(c) FESEM morphologies and (b)(d) OIM images of Si (111) surface irradiated by femtosecond lasers with different pulse energies
    (a)(c) FESEM morphologies and (b)(d) OIM images of Si (111) surface irradiated by femtosecond lasers with different pulse energies
    IQ images of Si surfaces irradiated by femtosecond lasers with different pulse energies. (a) (111) surface; (b) (100) surface
    Si (111) surface irradiated by femtosecond laser with pulse energy of 40 μJ. (a) Surface topography of sample; (b) energy spectra of samples
    Atomic distribution diagrams of monocrystal Si (100) and (111) surfaces
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    Zhang Xin, Huang Ting, Xiao Rongshi. Behavior Characteristics of Different Crystal Surfaces of Monocrystal Silicon Under Femtosecond Laser Irradiation[J]. Chinese Journal of Lasers, 2017, 44(1): 102012

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    Paper Information

    Special Issue:

    Received: Sep. 27, 2016

    Accepted: --

    Published Online: Jan. 10, 2017

    The Author Email: Zhang Xin (zhangxin2014@emails.bjut.edu.cn)

    DOI:10.3788/CJL201744.0102012

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