Design and Optimization of Inverted Pyramid Suede for Ultrathin Monocrystalline Silicon Photovoltaic Cells

Fig. 1. Photovoltaic cell structure diagram and optical and electrical optimization model diagram. (a) Schematic diagram of photovoltaic cell structure; (b) optical optimization model diagram; (c) electrical optimization model diagram

Download full size

Fig. 2. Optimization of slope of inverted pyramid

Download full size

Fig. 3. Absorption curves of solar spectrum of photovoltaic cell

Download full size

Fig. 4. Poynting vector diagram of photovoltaic cells at specific wavelengths. (a) Poynting vector diagram of photovoltaic cells at a wavelength of 1102.12 nm; (b) Poynting vector diagram of photovoltaic cells at a wavelength of 1178.43 nm

Download full size

Fig. 5. Voltammetry characteristic curve of photovoltaic cell

Download full size

Table 1. Input parameters of photovoltaic cell optical optimization

View table

Table 1. Input parameters of photovoltaic cell optical optimization

Argument	Value
Absorption layer height h / $μ m$	3
Inverted pyramid suede lattice constant a / $μ m$	0.1‒1
Inverted pyramid suede depth d / $μ m$	0‒2.5
Slope of the inverted pyramid $θ$ /（°）	0‒80
ARC1 refractive index n₁	1.4
ARC1 thickness t₁ / $μ m$	0.045
ARC2 refractive index n₂	2.6
ARC2 thickness t₂ / $μ m$	0.1
Wavelength range of the solar spectrum $λ$ /nm	300‒1200

Table 2. Photovoltaic cell electrical optimization of the input parameter range

View table

Table 2. Photovoltaic cell electrical optimization of the input parameter range

Argument	Value
Emitter width W_emitter / $μ m$	0.002‒2
Base width W_base / $μ m$	0.002‒1.8
n uniform doping concentration N_n /cm^-3	1×10¹³‒1×10¹⁶
n⁺_up Gaussian doping depth d_n+up / $μ m$	0.3‒1
n⁺_up Gaussian doping peak concentration N_n+up /cm^-3	1×10¹⁵‒1×10¹⁸
n⁺_up Gaussian doped junction depth W_n+up / $μ m$	0‒0.3
n⁺_up Gaussian doping reference concentration N_n+up-ref/ cm^-3	1×10¹¹‒1×10¹⁵
n⁺_down Gaussian doping depth d_n+down / $μ m$	0.01‒0.4
n⁺_down Gaussian doping peak concentration N_n+down /cm^-3	1×10¹⁵‒1×10¹⁸
n⁺_down Gaussian doped junction depth W_n+down / $μ m$	0‒0.3
n⁺_down Gaussian doping reference concentration N_n+down-ref /cm^-3	1×10¹³‒1×10¹⁵
p⁺ Gaussian doping depth d_p+ / $μ m$	0.01‒0.3
p⁺ Gaussian doping peak concentration N_p+ /cm^-3	1×10¹⁸‒1×10²²
p⁺ Gaussian doped junction depth W_p+ / $μ m$	0‒0.4
p⁺ Gaussian doping reference concentration N_p+_r_ef/ cm^-3	1×10¹⁰‒1×10¹⁴
Electron/hole surface recombination rate of Si and SiO₂S₁ /（cm·s^-1）	1×10²
Electron/hole surface recombination rate of Si and Al S₂ /（cm·s^-1）	1×10⁷
Electron/hole surface recombination rate of Si and Ag S₃ /（cm·s^-1）	1×10³
Electron/hole surface recombination rate of Si and SiN_xS₄ /（cm·s^-1）	1×10²
Electron trap lifetime $τ_{n}$ /μ $s$	3.3
Hole trap lifetime $τ_{p}$ /μ $s$	4
Si electron Auger recombination rate at 300 K C_n，Auger /（cm⁶·s^-1）	2.8×10^‒31
Si hole Auger recombination rate at 300 K C_p，Auger /（cm⁶·s^-1）	9.9×10^‒31
Radiation recombination coefficient of Si at 300 K C_radiative /（cm³·s^-1）	1.6×10^‒14

Table 3. Photovoltaic cell electrical optimization input parameter optimization results

View table

Table 3. Photovoltaic cell electrical optimization input parameter optimization results

Argument	Value
Emitter width W_emitter / $μ m$	0.002
Base width W_base / $μ m$	1.41
n uniform doping concentration N_n /cm^-3	3.86×10¹⁵
n⁺_up Gaussian doping depth d_n+up / $μ m$	0.93
n⁺_up Gaussian doping peak concentration N_n+up /cm^-3	5.52×10¹⁶
n⁺_up Gaussian doped junction depth W_n+up / $μ m$	0.02
n⁺_up Gaussian doping reference concentration N_n+up-ref /cm^-3	5.26×10¹⁴
n⁺_down Gaussian doping depth d_n+down / $μ m$	0.09
n⁺_down Gaussian doping peak concentration N_n+down /cm^-3	7.80×10¹⁷
n⁺_down Gaussian doped junction depth W_n+down / $μ m$	0.08
n⁺_down Gaussian doping reference concentration N_n+down-ref /cm^-3	3.33×10¹⁴
p⁺ Gaussian doping depth d_p+ / $μ m$	0.01
p⁺ Gaussian doping peak concentration N_p+ /cm^-3	9.91×10²¹
p⁺ Gaussian doped junction depth W_p+ / $μ m$	0.00
p⁺ Gaussian doping reference concentration N_p+ref/ cm^-3	7.13×10¹²

Table 4. Performance index of photovoltaic cell electrical optimization

View table

Table 4. Performance index of photovoltaic cell electrical optimization

Argument	Value
Short circuit current density J_sc /（ $m A \cdot c m^{- 2}$ ）	43.15
Open circuit voltage V_oc /V	0.64
Maximum power density P_m /（mW·cm^-2）	23.03
Fill factor /%	82.64
Photoelectric conversion efficiency $η$ /%	23.03

Table 5. Comparison of photovoltaic cell performance

View table

Table 5. Comparison of photovoltaic cell performance

Suede	Electrode type	Height h / $μ m$	$η$ /%
64° inverted pyramid^［31］	Aluminum back field	190 $\pm$ 10	19.67
Lambertian structure^［32］	Aluminum back field	30	23.50
Inverted pyramid^［33］	Aluminum back field	80	18.87
Inverted pyramid^［34］	Aluminum back field	2.75	6.10
77.40° inverted pyramid	Fingers crossed back contact	3	23.03

Tools

Get Citation

Copy Citation Text

Xubin Qi, Yang Xiang, Yang Yang. Design and Optimization of Inverted Pyramid Suede for Ultrathin Monocrystalline Silicon Photovoltaic Cells[J]. Laser & Optoelectronics Progress, 2024, 61(13): 1316002

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Materials

Received: Aug. 28, 2023

Accepted: Oct. 9, 2023

Published Online: Jul. 17, 2024

The Author Email: Yang Xiang (xiangyang@hpu.edu.cn)

DOI:10.3788/LOP231986

CSTR:32186.14.LOP231986

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology