APPLIED LASER, Volume. 44, Issue 11, 72(2024)

Study on the Mechanism of Picosecond Pulsed Laser Etching of Tantalum-Silicon Composite Dielectric Films

Jin Cong1, Wang Ziwen1, Wang Yutao2, Wang Li2, Zhang Luo1, He Zongtai1、*, and Liu Dun1
Author Affiliations
  • 1Laser Group, School of Mechanical Engineering, Hubei University of Technology, Wuhan 430068, Hubei, China
  • 2Shanghai Key Laboratory of Laser Beam Micro Processing, Shanghai Institute of Laser Technology, Shanghai 200233, China
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    The 532 nm picosecond laser was used to etch the surface of the tantalum-silicon composite dielectric film for precision grooving. The microscopic morphology and elemental composition of the tissue after laser etching were analyzed using optical microscopy, scanning electron microscopy, laser confocal microscopy and energy spectrometry. A three-dimensional ablation model was established to analyze the temperature field of the laser interaction with the tantalum-silicon composite dielectric film. The results show that at a laser energy density of 3.24 J/cm2, the tantalum oxide dielectric film can be effectively removed without causing damage to the silica dielectric film or the substrate, thus achieving controlled-depth laser ablation processing.

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    Jin Cong, Wang Ziwen, Wang Yutao, Wang Li, Zhang Luo, He Zongtai, Liu Dun. Study on the Mechanism of Picosecond Pulsed Laser Etching of Tantalum-Silicon Composite Dielectric Films[J]. APPLIED LASER, 2024, 44(11): 72

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    Paper Information

    Received: Mar. 13, 2023

    Accepted: Mar. 11, 2025

    Published Online: Mar. 11, 2025

    The Author Email: Zongtai He (201910115@hbut.edu.cn)

    DOI:10.14128/j.cnki.al.20244411.072

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