Chinese Journal of Lasers, Volume. 47, Issue 7, 701023(2020)

Temperature Dependence of Wet Oxidation Process Based on VCSEL

Chen Lei, Luo Yan, Feng Yuan, Yan Changling, Fan Jie, Gao Xin, Zou Yonggang, and Hao Yongqin
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology,Changchun, Jilin 130022, China
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    Figures & Tables(7)
    Structure of VCSEL epitaxial structure
    Oxidation rate versus temperature (inset is SEM picture of oxidized sample section at 435 ℃)
    Oxidation depth versus time
    Oxide pores at different oxidation temperatures. (a) 400 ℃; (b) 420 ℃; (c) 435 ℃
    Problems generated after sample oxidation. (a) Delamination fracture; (b) longitudinal shrinkage
    Typical and optimized temperature control curves
    SEM photographs of oxidized samples under different temperature control conditions. (a) Typical temperature control process; (b) optimized temperature control process
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    Chen Lei, Luo Yan, Feng Yuan, Yan Changling, Fan Jie, Gao Xin, Zou Yonggang, Hao Yongqin. Temperature Dependence of Wet Oxidation Process Based on VCSEL[J]. Chinese Journal of Lasers, 2020, 47(7): 701023

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    Paper Information

    Special Issue:

    Received: Dec. 4, 2019

    Accepted: --

    Published Online: Jul. 10, 2020

    The Author Email:

    DOI:10.3788/CJL202047.0701023

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