Ion implantation process and lattice damage mechanism of boron doped crystalline germanium

Um E HABIBA; Tian-Ye CHEN; Chi-Xian LIU; Wei DOU; Xiao-Yan LIU; Jing-Wei LING; Chang-Yi PAN; Peng WANG; Hui-Yong DENG; Hong SHEN; Ning DAI

doi:10.11972/j.issn.1001-9014.2024.06.004

Journal of Infrared and Millimeter Waves, Volume. 43, Issue 6, 749(2024)

Ion implantation process and lattice damage mechanism of boron doped crystalline germanium

Um E HABIBA^1,2, Tian-Ye CHEN^1,5, Chi-Xian LIU^1,5, Wei DOU^1,5, Xiao-Yan LIU^1,3, Jing-Wei LING¹, Chang-Yi PAN^1,3, Peng WANG^1,2, Hui-Yong DENG^1,2,4、*, Hong SHEN^1,2、**, and Ning DAI^{1,2,3,4、***}

Author Affiliations

¹State Key Laboratory of Infrared Physics，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

²University of Chinese Academy of Sciences，Beijing 100049，China

³College of Physics and Optoelectronic Engineering，Hangzhou Institute for Advanced Study，University of Chinese Academy of Sciences，Hangzhou 310024，China

⁴Zhejiang Laboratory，Hangzhou 311100，China

⁵School of Physical Science and Technology，ShanghaiTech University，Shanghai 201210，China

show less

Abstract Get PDF(in Chinese)

References(21)

[1] Moskalyk R R. Review of germanium processing worldwide[J]. Minerals engineering, 17, 393-402(2004).

[2] Haller E E. Germanium: From its discovery to SiGe devices[J]. Materials science in semiconductor processing, 9, 408-422(2006).

[3] Zhang Q, Jevasuwan W, Fukata N. Morphology and boron doping control of germanium nanowires by ex situ diffusion doping[J]. ACS Applied Electronic Materials, 5, 4674-4681(2023).

[4] Baudis L, Hellmig J, Klapdor-Kleingrothaus H V et al. High-purity germanium detector ionization pulse shapes of nuclear recoils, γ-interactions and microphonism[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 418, 348-354(1998).

[5] Zhu J, Zhu H, Xu H et al. Impact of the structural parameters on the photoresponse of terahertz blocked-impurity-band detectors with planar structure[J]. IEEE Transactions on Terahertz Science and Technology, 10, 358-362(2020).

[6] Gáspár A, Rieke G H, Guillard P et al. The quantum efficiency and diffractive image artifacts of Si: As IBC mid-IR detector arrays at 5-10 μm: Implications for the JWST/MIRI detectors[J]. Publications of the Astronomical Society of the Pacific, 133, 014504(2020).

[7] Richards P L, McCreight C R. Infrared detectors for astrophysics[J]. Physics Today, 58, 41-47(2005).

[8] Beeman J W, Goyal S, Reichertz L A et al. Ion-implanted Ge: B far-infrared blocked-impurity-band detectors[J]. Infrared physics & technology, 51, 60-65(2007).

[9] Cao L C T, Hakim L, Hsu S H. Boron doping in next-generation materials for semiconductor device[M]. Characteristics and Applications of Boron. IntechOpen(2022).

[10] Current M I. Ion implantation of advanced silicon devices: Past, present and future[J]. Materials Science in Semiconductor Processing, 62, 13-22(2017).

[11] Pan C, Yin Z, Song Z et al. Dark-current-blocking mechanism in BIB far-infrared detectors by interfacial barriers[J]. IEEE Transactions on Electron Devices, 68, 2804-2809(2021).

[12] PAN Chang-Yi, MOU Hao, YAO Xiao-Mei et al. High performance Ge:B blocked impurity band detector developed using near-surface processing techniques[J]. J. Infrared MillimWaves.

[13] Peaker A R, Markevich V, Slotte J et al. Understanding ion implantation defects in germanium[J]. ECS Transactions, 3, 67(2006).

[14] Uppal S, Willoughby A F W, Bonar J M et al. Diffusion of ion-implanted boron in germanium[J]. Journal of Applied Physics, 90, 4293-4295(2001).

[15] Suh Y S, Carroll M S, Levy R A et al. Implantation and activation of high concentrations of boron in germanium[J]. IEEE transactions on electron devices, 52, 2416-2421(2005).

[16] Bermejo D, Cardona M. Raman scattering in pure and hydrogenated amorphous germanium and silicon[J]. Journal of Non-Crystalline Solids, 32, 405-419(1979).

[17] Jain K P, Shukla A K, Ashokan R et al. Raman scattering from ion-implanted silicon[J]. Physical Review B, 32, 6688(1985).

[18] Utamuradova S B, Daliev S K, Stanchik A V et al. Raman spectroscopy of silicon, doped with platinum and irradiated by protons[C], 402, 14014(2023).

[19] Kalimuthu V, Kumar P, Kumar M et al. Growth mechanism and optical properties of Ge nanocrystals embedded in a GeO x matrix[J]. Applied Physics A, 124, 1-8(2018).

[20] Cai Z, Zhang P, Tan J. The influence of boron implantation into silicon substrate on the internal stress and adhesion strength of c-BN films[J]. Surface and Coatings Technology, 201, 5039-5042(2007).

[21] Wittmann R, Selberherr S. A study of ion implantation into crystalline germanium[J]. Solid-state electronics, 51, 982-988(2007).

Tools

Get Citation

Copy Citation Text

Um E HABIBA, Tian-Ye CHEN, Chi-Xian LIU, Wei DOU, Xiao-Yan LIU, Jing-Wei LING, Chang-Yi PAN, Peng WANG, Hui-Yong DENG, Hong SHEN, Ning DAI. Ion implantation process and lattice damage mechanism of boron doped crystalline germanium[J]. Journal of Infrared and Millimeter Waves, 2024, 43(6): 749

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Infrared Physics, Materials and Devices

Received: Feb. 1, 2024

Accepted: --

Published Online: Dec. 13, 2024

The Author Email: Hui-Yong DENG (hydeng@mail.sitp.ac.cn), Hong SHEN (hongshen@mail.sitp.ac.cn), Ning DAI (ndai@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2024.06.004

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology