Ion implantation process and lattice damage mechanism of boron doped crystalline germanium

Um E HABIBA; Tian-Ye CHEN; Chi-Xian LIU; Wei DOU; Xiao-Yan LIU; Jing-Wei LING; Chang-Yi PAN; Peng WANG; Hui-Yong DENG; Hong SHEN; Ning DAI

doi:10.11972/j.issn.1001-9014.2024.06.004

Journal of Infrared and Millimeter Waves, Volume. 43, Issue 6, 749(2024)

Ion implantation process and lattice damage mechanism of boron doped crystalline germanium

Um E HABIBA^1,2, Tian-Ye CHEN^1,5, Chi-Xian LIU^1,5, Wei DOU^1,5, Xiao-Yan LIU^1,3, Jing-Wei LING¹, Chang-Yi PAN^1,3, Peng WANG^1,2, Hui-Yong DENG^1,2,4、*, Hong SHEN^1,2、**, and Ning DAI^{1,2,3,4、***}

Author Affiliations

¹State Key Laboratory of Infrared Physics，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

²University of Chinese Academy of Sciences，Beijing 100049，China

³College of Physics and Optoelectronic Engineering，Hangzhou Institute for Advanced Study，University of Chinese Academy of Sciences，Hangzhou 310024，China

⁴Zhejiang Laboratory，Hangzhou 311100，China

⁵School of Physical Science and Technology，ShanghaiTech University，Shanghai 201210，China

show less

Abstract Get PDF(in Chinese)

Figures & Tables(7)

Fig. 1. XRD spectra of B implanted Ge：（a）as implanted；（b）after annealing at 450^oC

Download full size

View in Article

Fig. 2. Raman spectra of B implanted Ge samples at different doses：（a）as implanted；（b）annealed at 450 ^oC

Download full size

View in Article

Fig. 3. Spectra of germanium sample implanted at 3× $10^{15} c m^{- 2}$ before and after annealing

Download full size

View in Article

Fig. 4. XPS spectra illustrating boron implantation into germanium across distinct doses：（a）Ge3d scan；（b）C1s scan

Download full size

View in Article

Fig. 5. XPS B1s spectra illustrating boron implantation into germanium across six distinct doses

Download full size

View in Article

Fig. 6. SIMS analysis of B implanted Ge for two high doses：（a） $3 \times 10^{15} c m^{- 2}$ ；（b） $5 \times 10^{14}$ cm^-2

Download full size

View in Article

Table 1. SIMS analysis results for boron implanted germanium for two specific doses

View table

View in Article

Table 1. SIMS analysis results for boron implanted germanium for two specific doses

Dose（cm^-2）	Concentration（at/cm³）	$R_{p}$ （μm）	Aerial Density（at/cm²）	Dose（cm^-2）	Concentration（at/cm³）
5× $10^{14}$	1.97× $10^{19}$	0.239	4.95× $10^{14}$	5× $10^{14}$	1.97× $10^{19}$
3× $10^{15}$	1.29× $10^{20}$	0.239	3.06× $10^{15}$	3× $10^{15}$	1.29× $10^{20}$

Tools

Get Citation

Copy Citation Text

Um E HABIBA, Tian-Ye CHEN, Chi-Xian LIU, Wei DOU, Xiao-Yan LIU, Jing-Wei LING, Chang-Yi PAN, Peng WANG, Hui-Yong DENG, Hong SHEN, Ning DAI. Ion implantation process and lattice damage mechanism of boron doped crystalline germanium[J]. Journal of Infrared and Millimeter Waves, 2024, 43(6): 749

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Infrared Physics, Materials and Devices

Received: Feb. 1, 2024

Accepted: --

Published Online: Dec. 13, 2024

The Author Email: Hui-Yong DENG (hydeng@mail.sitp.ac.cn), Hong SHEN (hongshen@mail.sitp.ac.cn), Ning DAI (ndai@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2024.06.004

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology