[1] J. Zhang, M. A. Itzler, H. Zbinden, J. W. Pan. Advances in InGaAs/InP single-photon detector systems for quantum communication. Light Sci. Appl., 4, e286(2015).

[2] M. Wanitzek, M. Oehme, D. Schwarz, K. Guguieva, J. Schulze. Ge-on-Si avalanche photodiodes for LIDAR applications. 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), 8-12(2020).

[3] V. Sorianello, A. Perna, L. Colace, G. Assanto, H. C. Luan, L. C. Kimerling. Near-infrared absorption of germanium thin films on silicon. Appl. Phys. Lett., 93, 111115(2008).

[4] Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H.-C. Luan, L. C. Kimerling. Strain-induced band gap shrinkage in Ge grown on Si substrate. Appl. Phys. Lett., 82, 2044-2046(2003).

[5] J. M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J. M. Fédéli, M. Rouvière, L. Vivien, S. Laval. Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection. J. Appl. Phys., 95, 5905-5913(2004).

[6] H. T. Chen, J. Verbist, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, B. Moeneclaey, X. Yin, J. Bauwelinck, J. Van Campenhout, G. Roelkens. 25-Gb/s 1310-nm optical receiver based on a sub-5-V waveguide-coupled germanium avalanche photodiode. IEEE Photon. J., 7, 7902909(2015).

[7] A. Palmieri, M. Vallone, M. Calciati, A. Tibaldi, F. Bertazzi, G. Ghione, M. Goano. Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors. Opt. Quantum Electron., 50, 71(2018).

[8] Z. Huang, C. Li, D. Liang, K. Yu, C. Santori, M. Fiorentino, W. Sorin, S. Palermo, R. G. Beausoleil. 25  Gbps low-voltage waveguide Si–Ge avalanche photodiode. Optica, 3, 793-798(2016).

[9] W. S. Zaoui, H.-W. Chen, J. E. Bowers, Y. Kang, M. Morse, M. J. Paniccia, A. Pauchard, J. C. Campbell. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840  GHz gain-bandwidth-product. Opt. Express, 17, 12641-12649(2009).

[10] Y. Kang, M. Zadka, S. Litski, G. Sarid, M. Morse, M. J. Paniccia, Y. H. Kuo, J. Bowers, A. Beling, H. D. Liu, D. C. McIntosh, J. Campbell, A. Pauchard. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3  μm light detection. Opt. Express, 16, 9365-9371(2008).

[11] G. Kim, S. Kim, S. A. Kim, J. H. Oh, K.-S. Jang. NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector. Opt. Lett., 43, 5583-5586(2018).

[12] X. Zeng, Z. Huang, B. Wang, D. Liang, M. Fiorentino, R. G. Beausoleil. Silicon-germanium avalanche photodiodes with direct control of electric field in charge multiplication region. Optica, 6, 772-777(2019).

[13] B. Wang, Z. Huang, X. Zeng, D. Liang, M. Fiorentino, R. G. Beausoleil. 35  Gb/s ultralow-voltage three-terminal Si-Ge avalanche photodiode. Optical Fiber Communications Conference and Exhibition (OFC), Th3B.2(2019).

[14] X. Zeng, Z. Huang, D. Liang, M. Fiorentino, R. G. Beausoleil. Low-voltage three-terminal avalanche photodiodes. Conference on Lasers and Electro-Optics, SF2I.3(2017).

[15] D. Benedikovic, L. Virot, G. Aubin, J.-M. Hartmann, F. Amar, X. Le Roux, C. Alonso-Ramos, É. Cassan, D. Marris-Morini, J.-M. Fédéli, F. Boeuf, B. Szelag, L. Vivien. Silicon-germanium receivers for short-wave-infrared optoelectronics and communications high-speed silicon-germanium receivers. Nanophotonics, 10, 1059-1079(2021).

[16] Z. Huang, X. Zeng, D. Liang, M. Fiorentino, R. G. Beausoleil. Operation and analysis of low-voltage three-terminal avalanche photodiodes. IEEE 14th International Conference on Group IV Photonics (GFP), 174-175(2017).

[17] L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, L. Vivien. Germanium avalanche receiver for low power interconnects. Nat. Commun., 5, 4957(2014).

[18] Y. Li, X. Luo, G. Liang, G.-Q. Lo. Demonstration of Ge/Si avalanche photodetector arrays for lidar application. Optical Fiber Communication Conference, TU3E.3(2019).

[19] M. Huang, S. Li, P. Cai, G. Hou, T.-I. Su, W. Chen, C.-Y. Hong, D. Pan. Germanium on silicon avalanche photodiode. IEEE J. Sel. Top. Quantum Electron., 24, 3800911(2018).

[20] K. He, J. Lu, X. Ma, Y. Ju, L. Xie, L. Pang, X. Wang, J. Chen. Effect of Maxwell–Wagner relaxation on field charging of particles. Aerosol Sci. Technol., 49, 1210-1221(2015).

[21] D. Dai, M. Piels, J. E. Bowers. Monolithic germanium/silicon photodetectors with decoupled structures: resonant APDs and UTC photodiodes. IEEE J. Sel. Top. Quantum Electron., 20, 3802214(2014).

[22] H.-Y. Zhao, , A. H. Jones, R.-L. Chao, Z. Ahmad, J. C. Campbell, J.-W. Shi. High-speed avalanche photodiodes with wide dynamic range performance. J. Lightwave Technol., 37, 5945-5952(2019).

[23] B. Wang, Z. Huang, X. Zeng, R. Wu, W. V. Sorin, D. Liang, R. G. Beausoleil. A compact model for Si-Ge avalanche photodiodes. IEEE 15th International Conference on Group IV Photonics (GFP), 109-110(2018).

[24] D. R. Gozzard, L. E. Roberts, J. T. Spollard, P. G. Sibley, D. A. Shaddock. Fast beam steering with an optical phased array. Opt. Lett., 45, 3793-3796(2020).

[25] K. Van Acoleyen, K. Komorowska, W. Bogaerts, R. Baets. One-dimensional off-chip beam steering and shaping using optical phased arrays on silicon-on-insulator. J. Lightwave Technol., 29, 3500-3505(2011).

[26] D. Kwong, A. Hosseini, Y. Zhang, R. T. Chen. 1 × 12 unequally spaced waveguide array for actively tuned optical phased array on a silicon nanomembrane. Appl. Phys. Lett., 99, 051104(2011).

[27] D. Dai, M. J. W. Rodwell, J. E. Bowers, Y. Kang, M. Morse. Derivation of the small signal response and equivalent circuit model for a separate absorption and multiplication layer avalanche photodetector. IEEE J. Sel. Top. Quantum Electron., 16, 1328-1336(2010).

[28] J.-M. Lee, S.-H. Cho, W.-Y. Choi. An equivalent circuit model for a Ge waveguide photodetector on Si. IEEE Photon. Technol. Lett., 28, 2435-2438(2016).

[29] B. Wang, Z. Huang, X. Zeng, W. V. Sorin, D. Liang, M. Fiorentino, R. G. Beausoleil. A compact model for Si-Ge avalanche photodiodes over a wide range of multiplication gain. J. Lightwave Technol., 37, 3229-3235(2019).

[30] D. Dai, H.-W. Chen, J. E. Bowers, Y. Kang, M. Morse, M. J. Paniccia. Equivalent circuit model of a Ge/Si avalanche photodiode. 6th IEEE International Conference on Group IV Photonics, 13-15(2009).

[31] M.-J. Lee, H.-S. Kang, W.-Y. Choi. Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process. IEEE Electron Device Lett., 29, 1115-1117(2008).

[32] D. Dai, H.-W. Chen, J. E. Bowers, Y. Kang, M. Morse, M. J. Paniccia. Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes. Opt. Express, 17, 16549-16557(2009).

[33] Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, J. C. Campbell. Monolithic germanium silicon avalanche photodiodes with 340  GHz gain-bandwidth product. Nat. Photonics, 3, 59-63(2009).

[34] B. Shi, F. Qi, P. Cai, X. Chen, Z. He, Y. Duan, G. Hou, T. Su, S. Li, W. Chen, C. Hong, R.-C. Yu, D. Pan. 106  Gb/s normal-incidence Ge/Si avalanche photodiode with high sensitivity. Optical Fiber Communication Conference, M3D.2(2020).

[35] C.-L. Hsin, C.-H. Chou. Buffer-free Ge/Si by rapid melting growth technique for separate absorption and multiplication avalanche photodetectors. IEEE Electron Device Lett., 40, 945-948(2019).

[36] M. Huang, T. Shi, P. Cai, L. Wang, S. Li, W. Chen, C.-Y. Hong, D. Pan. 25  Gb/s normal incident Ge/Si avalanche photodiode. Systematic Paris Region Systems and ICT Cluster, 1-3(2014).