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Photonics Research, Volume. 10, Issue 8, 1956(2022)

Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction

Xiaobin Liu1, Xuetong Li1, Yuxuan Li1, Yingzhi Li1, Zihao Zhi1, Min Tao1, Baisong Chen1, Lanxuan Zhang1, Pengfei Guo2, Guoqiang Lo2, Xueyan Li1, Fengli Gao1, Bonan Kang1, and Junfeng Song1,3、*
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • 2Advance Micro Foundry Pte Ltd, Singapore 117685, Singapore
  • 3Peng Cheng Laboratory, Shenzhen 518000, China
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    Article index updated: Jan. 27, 2025

    Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.
    The article is cited by 9 article(s) from Web of Science.
    The article is cited by 2 article(s) CLP online library. (Some content might be in Chinese.)
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    Xiaobin Liu, Xuetong Li, Yuxuan Li, Yingzhi Li, Zihao Zhi, Min Tao, Baisong Chen, Lanxuan Zhang, Pengfei Guo, Guoqiang Lo, Xueyan Li, Fengli Gao, Bonan Kang, Junfeng Song, "Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction," Photonics Res. 10, 1956 (2022)

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    Paper Information

    Category: Silicon Photonics

    Received: Dec. 22, 2021

    Accepted: Jun. 13, 2022

    Published Online: Jul. 27, 2022

    The Author Email: Junfeng Song (songjf@jlu.edu.cn)

    DOI:10.1364/PRJ.452004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology