Journal of Inorganic Materials, Volume. 40, Issue 5, 536(2025)

Low-temperature Sintering of LiBxAl1-xSi2O6 Microwave Dielectric Ceramics with Ultra-low Permittivity

Siyu XIONG1, Chen MO1, Xiaowei ZHU1, Guobin ZHU1, Deqin CHEN1, Laijun LIU1, Xiaodong SHI2, and Chunchun LI1、*
Author Affiliations
  • 11. College of Material Science and Engineering, Guilin University of Technology, Guilin 541004, China
  • 22. College of Physics and Electrical Information Engineering, Guilin University of Technology, Guilin 541004, China
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    Figures & Tables(10)
    Crystal structure of LiAlSi2O6
    XRD patterns of LiBxAl1-xSi2O6 ceramics
    Relationship between bulk density and sintering temperature of LiBxAl1-xSi2O6 ceramics
    SEM images and grain size distributions of LiBxAl1-xSi2O6 ceramics
    Raman spectra and corresponding parameters of LiBxAl1-xSi2O6 ceramics
    Microwave dielectric properties of LiBxAl1-xSi2O6 ceramics
    • Table 1. Rietveld refined structural parameters of LiBxAl1-xSi2O6 ceramics

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      Table 1. Rietveld refined structural parameters of LiBxAl1-xSi2O6 ceramics

      xLattice parameterRp/% Rwp/% χ2
      a/nm b/nm c/nm V/nm3
      00.75380(5)0.75380(5)0.91556(4)0.52024(4)7.6910.81.84
      0.050.75346(3)0.75346(3)0.91533(1)0.51963(9)7.3210.11.83
      0.080.75320(5)0.75320(5)0.91494(0)0.51906(2)7.2410.21.89
      0.120.75286(8)0.75286(8)0.91434(9)0.51826(2)7.2410.21.87
      0.160.75246(2)0.75246(2)0.91332(8)0.51712(5)7.2910.11.86
      0.200.75206(4)0.75206(4)0.91257(9)0.51615(5)7.229.981.87
    • Table 2. Vm, α, εtheo, εr, and α/Vm of LiBxAl1-xSi2O6 ceramics

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      Table 2. Vm, α, εtheo, εr, and α/Vm of LiBxAl1-xSi2O6 ceramics

      xVm / nm3α / nm3εtheoεrα·Vm-1
      00.13006100.01579004.10423.950.121405
      0.050.12990980.01575304.09683.900.121261
      0.080.12976550.01573084.09493.850.121225
      0.120.12956550.01570124.09283.810.121184
      0.160.12928130.01567164.09473.760.121221
      0.200.12903880.01564204.09463.690.121219
    • Table 3. Bond valence, covalence and average covalence of LiBxAl1-xSi2O6 ceramics

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      Table 3. Bond valence, covalence and average covalence of LiBxAl1-xSi2O6 ceramics

      xVLiVSi/AlVOCLi-O/% CSi/Al-O/% Average/%
      00.8203.9061.91218.8753.1836.03
      0.050.8213.9351.92418.8953.4436.16
      0.080.8233.9471.93018.9253.5436.23
      0.120.8243.9781.94318.9453.8136.37
      0.160.8254.0361.96818.9554.3136.63
      0.200.8294.0751.98619.0254.6536.83
    • Table 4. Sintering temperatures (ST) and microwave dielectric properties of several silicates compared with LiBxAl1-xSi2O6[17,19,26,28,38,41 -45]

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      Table 4. Sintering temperatures (ST) and microwave dielectric properties of several silicates compared with LiBxAl1-xSi2O6[17,19,26,28,38,41 -45]

      ComponentST/℃εrQ×f/GHz τf/(×10-6, ℃-1) Ref.
      LiAlSiO413504.936000-57.3[17]
      Li(Al0.99Li0.01)SiO3.9912503.4951358-51.48[17]
      Ca2SiO414508.626100-89[19]
      Sr2SiO415759.519100-205[19]
      Ba2SiO4152513.117900-17[19]
      Zn2SiO413405.753000-16[41]
      Ba2ZnSi2O712008.0926600-51.4[42]
      Sr2MgSi2O712806.8522530-32[43]
      Sr3MgSi2O8145011.625375-57.41[44]
      Li2SiO310256.1930550-40.95[38]
      Li2ZnSiO412505.814700-96.6[45]
      Li2MgSiO411005.7313570-16.7[26]
      LiBxAl1-xSiO4(0.02≤x≤0.1)875-11003.34-3.7325770-27540-22.85--16.5[28]
      LiBxAl1-xSi2O6(0≤x≤0.20)1000-14003.69-3.9524300-30500-45.9--20.9This work
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    Siyu XIONG, Chen MO, Xiaowei ZHU, Guobin ZHU, Deqin CHEN, Laijun LIU, Xiaodong SHI, Chunchun LI. Low-temperature Sintering of LiBxAl1-xSi2O6 Microwave Dielectric Ceramics with Ultra-low Permittivity [J]. Journal of Inorganic Materials, 2025, 40(5): 536

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    Paper Information

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    Received: Nov. 27, 2024

    Accepted: --

    Published Online: Sep. 2, 2025

    The Author Email: Chunchun LI (lichunchun2003@126.com)

    DOI:10.15541/jim20240494

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