Journal of Advanced Dielectrics, Volume. 12, Issue 5, 2250018(2022)
Embedding epitaxial VO2 film with quality metal-insulator transition to SAW devices
[3] G. Y. Karapetyan, V. E. Kaydashev, D. A. Zhilin, M. E. Kutepov, T. A. Minasyan, E. M. Kaidashev. A surface acoustic wave impedance-loaded high sensitivity sensor with wide dynamic range for ultraviolet light detection. Sens. Actuat. A Phys., 296, 70(2019).
[4] Q. Fu, H. Stab, W. J. Fischer. Wireless passive SAW sensors using single-electrode-type IDT structures as programmable reflectors. Sens. Actuat. A Phys., 122, 203(2005).
[5] L. Reindl. Theory and application of passive saw radio transponders as sensors. IEEE Trans. Ultrason. Ferroelectr. Frequency Control, 45, 1281(1998).
[6] W. Luo, Q. Fu, J. Wang, Y. Wang, D. Zhou. Theoretical Analysis of Wireless Passive Impedance-Loaded SAW Sensors. IEEE Sensors Journal, 9, 1778(2009).
[7] A. Cavalleri, Th. Dekorsy, H. H. W. Chong, J. C. Kieffer, R. W. Schoenlein. Phys. Rev. B, 70, 161102(R)(2004).
[8] M. Borek, F. Qian, V. Nagabushnam, R. K. Singh. Pulsed laser deposition of oriented VO2 thin films on R-cut sapphire substrates. Appl. Phys. Lett., 63, 3288(1993).
[9] D. Y. Lei, K. Appavoo, F. Ligmajer, Y. Sonnefraud, R. F. Haglund, S. A. Maier. Optically-triggered nanoscale memory effect in a hybrid plasmonic-phase changing nanostructure. ACS Photon., 2, 1306(2015).
[10] J. Wei, Z. Wang, W. Chen, D. H. Cobden. New aspects of the metal-insulator transition in single-domain vanadium dioxide nanobeams. Nat. Nanotechnol., 4, 420(2009).
[11] M. M. Qazilbash, Z. Q. Li, V. Podzorov, M. Brehm, F. Keilmann, B. G. Chae, H. T. Kim, D. N. Basov. Electrostatic modification of infrared response in gated structures based on VO2. Appl. Phys. Lett., 92, 241906(2008).
[12] V. S. Aliev, S. G. Bortnikov, I. A. Badmaeva. Anomalous large electrical capacitance of planar microstructures with vanadium dioxide films near the insulator-metal phase transition. Appl. Phys. Lett., 104, 132906(2014).
[13] J. M. Wu, W. E. Chang. Ultrahigh responsivity and external quantum efficiency of an ultraviolet-light photodetector based on a single VO2 microwire. ACS Appl. Mater. Interfaces, 6, 14286(2014).
[14] Q. He, Sh. Sun, L. Zhou. Tunable/reconfigurable metasurfaces: Physics and applications. AAAS Res., 2019, 1849272(2019).
[15] Z. Song, A. Chen, J. Zhang. Terahertz switching between broadband absorption and narrowband absorption. Opt. Exp., 28, 2037(2020).
[16] N. A. Charipar, H. Kim, S. A. Mathews, A. Piqué. Broadband terahertz generation using the semiconductor-metal transition in VO2. AIP Adv., 6, 015113(2016).
[17] A. Lafort, H. Kebaili, S. Goumri-Said, O. Deparis, R. Cloots, J. De Coninck, M. Voué, F. Mirabella, F. Maseri, S. Lucas. Optical properties of thermochromic VO2 thin films on stainless steel: Experimental and theoretical studies. Thin Solid Films, 519, 3283(2011).
[18] J. B. K. Kana, J. M. Ndjaka, P. O. Ateba, B. D. Ngom, N. Manyala, O. Nemraoui, A. C. Beye, M. Maaza. Thermochromic VO2 thin films synthesized by rf-inverted cylindrical magnetron sputtering. Appl. Surf. Sci., 254, 3959(2008).
[19] T. Driscoll, H.T. Kim, B. G. Chae, M. Di Ventra, D. N. Basov. Phase-transition driven memristive system. Appl. Phys. Lett., 95, 043503(2009).
[20] S. Mathur, T. Ruegamer, I. Grobelsek. Phase-selective CVD of vanadium oxide nanostructures. Chem. Vap. Depos., 13, 42(2007).
[21] M. B. Sahana, M. S. Dharmaprakash, S. A. Shivashankar. Microstructure and properties of VO2 thin films deposited by MOCVD from vanadyl acetylacetonate. J. Mater. Chem., 12, 333(2002).
[22] L. Dillemans, R. R. Lieten, M. Menghini, T. Smets, J. W. Seo, J. P. Locquet. Correlation between strain and the metal-insulator transition in epitaxial V2O3 thin films grown by molecular beam epitaxy. Thin Solid Films, 520, 4730(2012).
[23] A. D. Rata, A. R. Chezan, M. W. Haverkort, H. H. Hsieh, H. J. Lin, C. T. Chen, L. H. Tjeng, T. Hibma. Growth and properties of strained VOx thin films with controlled stoichiometry. Phys. Rev. B. Condens. Matter Mater. Phys., 69, 075404(2004).
[24] S. Fan, L. Fan, Q. Li, J. Liu, B. Ye. The identification of defect structures for oxygen pressure dependent VO2 crystal films. Appl. Surf. Sci., 321, 464(2014).
[25] B. J. Kim, Y. W. Lee, S. Choi, B. G. Chae, H. T. Kim. Analysis of the surface morphology and the resistance of VO2 thin films on M-plane Al2O3. J. Korean Phys. Soc., 50, 653(2007).
[26] D. H. Kim, H. S. Kwok. Pulsed laser deposition of VO2 thin films. Appl. Phys. Lett., 65, 3188(1994).
[27] J. Galy, G. Miehe. Ab initio structures of (M2) and (M3) VO2 high pressure phases. Solid State Sci., 1, 433(1999).
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M. E. Kutepov, G. Ya. Karapetyan, T. A. Minasyan, V. E. Kaydashev, I. V. Lisnevskaya, K. G. Abdulvakhidov, A. A. Kozmin, E. M. Kaidashev. Embedding epitaxial VO2 film with quality metal-insulator transition to SAW devices[J]. Journal of Advanced Dielectrics, 2022, 12(5): 2250018
Category: Research Articles
Received: Jun. 24, 2022
Accepted: Sep. 15, 2022
Published Online: Dec. 5, 2022
The Author Email: M. E. Kutepov (kutepov.max@yandex.ru)