Journal of Advanced Dielectrics, Volume. 12, Issue 5, 2250018(2022)

Embedding epitaxial VO2 film with quality metal-insulator transition to SAW devices

M. E. Kutepov1、*, G. Ya. Karapetyan1, T. A. Minasyan1, V. E. Kaydashev1, I. V. Lisnevskaya2, K. G. Abdulvakhidov3, A. A. Kozmin1, and E. M. Kaidashev1
Author Affiliations
  • 1Laboratory of Nanomaterials, Southern Federal University, 200/1 Stachki Ave., 344090 Rostov-on-Don, Russia
  • 2Department of Chemistry, Southern Federal University, 7 Zorge St., 344090 Rostov-on-Don, Russia
  • 3Smart Materials Research Institute, Southern Federal University, 178/24 Sladkova St., 344090 Rostov-on-Don, Russia
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    M. E. Kutepov, G. Ya. Karapetyan, T. A. Minasyan, V. E. Kaydashev, I. V. Lisnevskaya, K. G. Abdulvakhidov, A. A. Kozmin, E. M. Kaidashev. Embedding epitaxial VO2 film with quality metal-insulator transition to SAW devices[J]. Journal of Advanced Dielectrics, 2022, 12(5): 2250018

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    Paper Information

    Category: Research Articles

    Received: Jun. 24, 2022

    Accepted: Sep. 15, 2022

    Published Online: Dec. 5, 2022

    The Author Email: M. E. Kutepov (kutepov.max@yandex.ru)

    DOI:10.1142/S2010135X22500187

    CSTR:32405.14.S2010135X22500187

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