Journal of Advanced Dielectrics, Volume. 12, Issue 5, 2250018(2022)

Embedding epitaxial VO2 film with quality metal-insulator transition to SAW devices

M. E. Kutepov1、*, G. Ya. Karapetyan1, T. A. Minasyan1, V. E. Kaydashev1, I. V. Lisnevskaya2, K. G. Abdulvakhidov3, A. A. Kozmin1, and E. M. Kaidashev1
Author Affiliations
  • 1Laboratory of Nanomaterials, Southern Federal University, 200/1 Stachki Ave., 344090 Rostov-on-Don, Russia
  • 2Department of Chemistry, Southern Federal University, 7 Zorge St., 344090 Rostov-on-Don, Russia
  • 3Smart Materials Research Institute, Southern Federal University, 178/24 Sladkova St., 344090 Rostov-on-Don, Russia
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    Epitaxial VO2 films grown by pulsed laser deposition (PLD) method with superior phase transition related switching characteristics are successfully embedded to SAW devices using concept of the “impedance loaded SAW sensor”. A resistance of VO2 sensor abruptly drops from 0.7 MΩ to 90 Ω when it is heated above 65C and shows a narrow hysteresis loops when switching. Two designs of SAW devices are examined in which RF signal is reflected back from interdigital transducer (IDT) or a surface acoustic waves (SAW) is transferred through a coupler and the RF response is altered 2 and 3 times correspondingly upon the phase transition in VO2. In the proposed devices with external load, a SAW does not propagate via VO2 film and therefore is not attenuated which is beneficiary for wireless applications. Additionally, a SAW phase shift as great as 50 is induced to the SAW transferred through the coupler due to the phase transition in VO2. The proposed approach may boost the development of remotely controlled autonomous sensors, including those based on VO2 metamaterials and hybrid plasmonic structures for near IR/middle IR and sub-THz/THz applications.Epitaxial VO2 films grown by pulsed laser deposition (PLD) method with superior phase transition related switching characteristics are successfully embedded to SAW devices using concept of the “impedance loaded SAW sensor”. A resistance of VO2 sensor abruptly drops from 0.7 MΩ to 90 Ω when it is heated above 65C and shows a narrow hysteresis loops when switching. Two designs of SAW devices are examined in which RF signal is reflected back from interdigital transducer (IDT) or a surface acoustic waves (SAW) is transferred through a coupler and the RF response is altered 2 and 3 times correspondingly upon the phase transition in VO2. In the proposed devices with external load, a SAW does not propagate via VO2 film and therefore is not attenuated which is beneficiary for wireless applications. Additionally, a SAW phase shift as great as 50 is induced to the SAW transferred through the coupler due to the phase transition in VO2. The proposed approach may boost the development of remotely controlled autonomous sensors, including those based on VO2 metamaterials and hybrid plasmonic structures for near IR/middle IR and sub-THz/THz applications.

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    M. E. Kutepov, G. Ya. Karapetyan, T. A. Minasyan, V. E. Kaydashev, I. V. Lisnevskaya, K. G. Abdulvakhidov, A. A. Kozmin, E. M. Kaidashev. Embedding epitaxial VO2 film with quality metal-insulator transition to SAW devices[J]. Journal of Advanced Dielectrics, 2022, 12(5): 2250018

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    Paper Information

    Category: Research Articles

    Received: Jun. 24, 2022

    Accepted: Sep. 15, 2022

    Published Online: Dec. 5, 2022

    The Author Email: Kutepov M. E. (kutepov.max@yandex.ru)

    DOI:10.1142/S2010135X22500187

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