Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 11, 1439(2022)

Effect of sputtering power on properties of W-doped ZnO thin film transistors

Hui LI1, Xiao-tian YANG2,3、*, Yan-jie WANG1,2、**, Chao WANG1,2, Fan YANG1,2, and Xiao-yuan NIE1
Author Affiliations
  • 1Jilin Provincial Kay Laboratory of Architectural Electricity & Comprehensive Energy Saving,School of Electrical and Computer Science,Jilin Jianzhu University,Changchun 130118,China
  • 2Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education,Jilin Jianzhu University,Changchun 130118,China
  • 3Jilin Normal University,Siping 136099,China
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    References(16)

    [3] LONG T. Study on stability of metal-oxidethin-film transistors[D](2020).

    [8] YANG X. Study of tungsten doping zinc tin oxide thin film transistor via solution process[D](2019).

    [9] CHEN X L, CHEN X L, ZHANG C S et al. Research on WZO-TCO thin films grown via reactive electron beam vapor deposition[J]. Journal of Optoelectronics·Laser, 22, 1655-1659(2011).

    [11] DENG Y, FAN Y J, TAO L et al. Liquid crystal nanoparticles containing azobenzene: synthesis, supramolecular structure and their applications in light-controlled orientation[J]. Chinese Journal of Applied Chemistry, 38, 1353-1361(2021).

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    Hui LI, Xiao-tian YANG, Yan-jie WANG, Chao WANG, Fan YANG, Xiao-yuan NIE. Effect of sputtering power on properties of W-doped ZnO thin film transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(11): 1439

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    Paper Information

    Category: Research Articles

    Received: May. 31, 2022

    Accepted: --

    Published Online: Nov. 3, 2022

    The Author Email: Xiao-tian YANG (hanyxt@163.com), Yan-jie WANG (wangyanjie@jlju.edu.cn)

    DOI:10.37188/CJLCD.2022-0180

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