Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 11, 1439(2022)
Effect of sputtering power on properties of W-doped ZnO thin film transistors
Fig. 2. XRD patterns of WZO thin films under different sputtering power
Fig. 3. SEM images of WZO films under different sputtering power.（a）1 W；（b）2 W；（c）3 W；（d）4 W；（e）5 W.
Fig. 4. Output characteristic curves and transfer characteristic curves of WZO-TFT under different sputtering power.（a）Output curves at 1 W；（b）Output curves at 2 W；（c）Output curves at 3 W；（d）Output curves at 4 W；（e）Output curves at 5 W；（f）Transfer characteristic curves of WZO-TFT.
Fig. 5. Optical transmittance curves of WZO films under different sputtering power
Table 1. Microstructure parameters of WZO thin films under different sputtering power
View tableView in ArticleTable 1. Microstructure parameters of WZO thin films under different sputtering power
W溅射功率/W 半峰全宽/（°） 晶粒尺寸/nm 1 0.693 12.1 2 0.654 12.9 3 0.709 11.9 4 0.813 10.3 5 0.890 9.4
Table 2. WZO-TFT performance parameters prepared by W under different sputtering power
View tableView in ArticleTable 2. WZO-TFT performance parameters prepared by W under different sputtering power
溅射功率/W 阈值电压/V 开关比 迁移率/
（cm2·V-1·s-1）
1 28.03 1.03×105 0.041 2 16.89 5.24×105 0.157 3 24.70 1.61×104 0.011 4 24.12 2.26×104 0.000 12 5 5.20 1.05×103
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Hui LI, Xiao-tian YANG, Yan-jie WANG, Chao WANG, Fan YANG, Xiao-yuan NIE. Effect of sputtering power on properties of W-doped ZnO thin film transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(11): 1439
Category: Research Articles
Received: May. 31, 2022
Accepted: --
Published Online: Nov. 3, 2022
The Author Email: Xiao-tian YANG (hanyxt@163.com), Yan-jie WANG (wangyanjie@jlju.edu.cn)
