Large-signal SPICE model for depletion-type silicon ring modulators

Minkyu Kim; Myungjin Shin; Min-Hyeong Kim; Byung-Min Yu; Younghyun Kim; Yoojin Ban; Stefan Lischke; Christian Mai; Lars Zimmermann; Woo-Young Choi

doi:10.1364/PRJ.7.000948

Photonics Research, Volume. 7, Issue 9, 948(2019)

Large-signal SPICE model for depletion-type silicon ring modulators Editors' Pick

Minkyu Kim¹, Myungjin Shin^1,2, Min-Hyeong Kim^1,3, Byung-Min Yu¹, Younghyun Kim^1,4, Yoojin Ban^1,4, Stefan Lischke⁵, Christian Mai⁵, Lars Zimmermann⁵, and Woo-Young Choi^1、*

Author Affiliations

¹Department of Electrical and Electronic Engineering, Yonsei University, 03722 Seoul, South Korea

²Now at University of Michigan, Ann Arbor, 48109 Michigan, USA

³Now at Samsung Electronics, Hwasung, 18448 Gyeonggi-do, South Korea

⁴Now at IMEC, Kapeldreef 75, 3001 Leuven, Belgium

⁵IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

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Figures & Tables(10)

Fig. 1. (a) Structure of the Si RM used; (b) TEM image of the cross-section of the coupling section; and (c) measured transmission curves with different bias voltages.

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Fig. 2. (a) Three blocks for the Si RM model; (b) circuit representing RM electrical property; and (c) equivalent circuit representing RM optical property.

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Fig. 3. Measured and simulated (red line) 25 Gb/s PRBS31 eye diagrams for different Dλ.

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Fig. 4. (a) Schematic diagram for an integrated 25 Gb/s Si photonic transmitter based on Photonic BiCMOS technology; (b) vertical eye opening for various RL and Itail values; and (c) simulated eye diagrams at different RL and Itail combinations.

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Fig. 5. PAM-4 eye diagram and level representation.

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Fig. 6. (a) Schematic diagram of the PAM-4 Si photonic transmitter including driver circuit and the RM and (b) simulated RLMRM values for various combinations of Dλ and RLMDRV values.

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Fig. 7. Simulated 25 GBaud PAM-4 eye diagrams at different combination of RLMDRV and Dλ.

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Table 1. Extracted Si RM Parameters at Different Bias Voltages
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Table 1. Extracted Si RM Parameters at Different Bias Voltages
$V_{Bias}$ (V) $n_{eff}$ $τ_{l}$ (ps/rad) $τ$ (ps/rad)
0 2.632166 22.7239 12.8595
−1 2.632185 22.9560 12.9335
−2 2.632216 23.5576 13.1224
−3 2.632233 23.5578 13.1225
−4 2.632250 23.5579 13.1225

Table 2. Values for Si RM Equivalent Circuit Model Parameters for the Case of $D_{λ} = 40$ and 70 pm

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Table 2. Values for Si RM Equivalent Circuit Model Parameters for the Case of $D_{λ} = 40$ and 70 pm

$V_{Bias}$ (V)	$R_{s}$ ( $Ω$ )	$C_{j}$ (fF)	$R_{1}$ ( $k Ω$ )		$C$ (fF)		$R_{2}$ ( $k Ω$ )	$L$ (nH)
$V_{Bias}$ (V)	$D_{λ} = 40$ and 70 pm		$D_{λ} = 40 pm$	$D_{λ} = 70 pm$	$D_{λ} = 40 pm$	$D_{λ} = 70 pm$	$D_{λ} = 40$ and 70 pm	$D_{λ} = 40$ and 70 pm
0	249	14.26	0.35	2.07	42.15	7.14	10.00	114.41
−1		10.95	0.75	3.15	19.65	4.70	9.96
−2		9.47	1.77	5.15	8.37	2.87	9.71
−3		8.55	3.01	7.19	4.92	2.06	9.71
−4		7.90	4.20	8.99	3.52	1.65	9.71

Table 3. Operating Conditions and Simulated Results for Different Points in Fig. 6
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Table 3. Operating Conditions and Simulated Results for Different Points in Fig. 6
${RLM}_{DRV}$ $D_{λ}$ ${RLM}_{RM}$
Point A 97.8% 80 pm 75.5%
Point B 78.9% 90 pm 88.5%
Point C 78.9% 80 pm 96.9%
Point D 67.2% 80 pm 82.0%

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Minkyu Kim, Myungjin Shin, Min-Hyeong Kim, Byung-Min Yu, Younghyun Kim, Yoojin Ban, Stefan Lischke, Christian Mai, Lars Zimmermann, Woo-Young Choi, "Large-signal SPICE model for depletion-type silicon ring modulators," Photonics Res. 7, 948 (2019)

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Paper Information

Category: Silicon Photonics

Received: Apr. 15, 2019

Accepted: Jun. 26, 2019

Published Online: Aug. 2, 2019

The Author Email: Woo-Young Choi (wchoi@yonsei.ac.kr)

DOI:10.1364/PRJ.7.000948

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Extracted Si RM Parameters at Different Bias Voltages

Table 1. Extracted Si RM Parameters at Different Bias Voltages

Table 2. Values for Si RM Equivalent Circuit Model Parameters for the Case of Dλ=40 and 70 pm

Table 2. Values for Si RM Equivalent Circuit Model Parameters for the Case of Dλ=40 and 70 pm

Table 3. Operating Conditions and Simulated Results for Different Points in Fig. 6

Table 3. Operating Conditions and Simulated Results for Different Points in Fig. 6

Table 2. Values for Si RM Equivalent Circuit Model Parameters for the Case of $D_{λ} = 40$ and 70 pm

Table 2. Values for Si RM Equivalent Circuit Model Parameters for the Case of $D_{λ} = 40$ and 70 pm