[1] [1] QIAN J, VORONIN G, ZERDA T W, et al. High-pressure, high-temperature sintering of diamond-SiC composites by ball-milled diamond-Si mixtures［J］. Journal of Materials Research, 2002, 17(8): 2153-2160.

[2] [2] CASADY J B, JOHNSON R W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review［J］. Solid-State Electronics, 1996, 39(10): 1409-1422.

[3] [3] DAI S W, LEI H, FU J F. Preparation of SiC/SiO2 hard core-soft shell abrasive and its CMP behavior on sapphire substrate［J］. Journal of Electronic Materials, 2020, 49(2): 1301-1307.

[4] [4] HEYDEMANN V D, EVERSON W J, GAMBLE R D, et al. Chemi-mechanical polishing of on-axis semi-insulating SiC substrates ［Z］. 10th International on Silicon Carbide and Related Materials (ICSCRM 2003), part2. Lyon, France. 2003: 805-8.

[10] [10] MARISCAL J C, MCALLISTER J, SAMPURNO Y, et al. Insights into tungsten chemical mechanical planarization: part I. surface micro-texture evolution during pad break-In［J］. ECS Journal of Solid State Science and Technology, 2019, 8(5): P3091-P3097.

[11] [11] MCALLISTER J, STUFFLE C, SAMPURNO Y, et al. Effect of conditioner type and downforce, and pad surface micro-texture on SiO2 chemical mechanical planarization performance［J］. Micromachines, 2019, 10(4): 258.