Chinese Optics Letters, Volume. 18, Issue 7, 071401(2020)
25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C
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Fig. 2. PL spectra of the one-layer and the eight-layer QDs samples. The inset shows the surface AFM image of the surface QD layer for the eight-layer QD sample.
Fig. 3. P–I curves of the laser at different temperatures from 20°C to 70°C. The inset shows the logarithmic threshold current as a function of temperature.
Fig. 4. Small signal frequency response curves of the InAs/GaAs QD laser, measured at different temperatures.
Fig. 5. Eye diagrams of the InAs/GaAs QD laser at different temperatures.
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Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang, "25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C," Chin. Opt. Lett. 18, 071401 (2020)
Paper Information
Category: Lasers and Laser Optics
Received: Dec. 31, 2019
Accepted: Mar. 25, 2020
Published Online: May. 25, 2020
The Author Email: Zunren Lü (lvzunren@semi.ac.cn), Tao Yang (tyang@semi.ac.cn)
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