25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C

Zhongkai Zhang; Zunren Lü; Xiaoguang Yang; Hongyu Chai; Lei Meng; Tao Yang

doi:10.3788/COL202018.071401

Chinese Optics Letters, Volume. 18, Issue 7, 071401(2020)

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C

Zhongkai Zhang^1,2, Zunren Lü^1,2、*, Xiaoguang Yang^1,2, Hongyu Chai^1,2, Lei Meng^1,2, and Tao Yang^1,2、**

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang, "25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C," Chin. Opt. Lett. 18, 071401 (2020)

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Paper Information

Category: Lasers and Laser Optics

Received: Dec. 31, 2019

Accepted: Mar. 25, 2020

Published Online: May. 25, 2020

The Author Email: Zunren Lü (lvzunren@semi.ac.cn), Tao Yang (tyang@semi.ac.cn)

DOI:10.3788/COL202018.071401

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology