Fig. 1. Three-dimensional surface topography of original surface and cross-sectional profile curve; (a) Three-dimensional surface topography of original surface; (b) cross-sectional profile curve along line A direction in Fig. 1(a)

Fig. 2. Schematic diagram of coordinate system used in laser irradiation model

Fig. 3. Thermal conductivity and specific heat capacity of single-crystal silicon varying with temperature

Fig. 4. Temperature distribution simulated by FEM during monopulse irradiation under different energy densities. (a) 0.27 J/cm²; (b) 0.42 J/cm²; (c) 0.50 J/cm²; (d) 0.58 J/cm²

Fig. 5. Temperature changes at different depths from surface under different energy densities. (a) 0.27 J/cm²; (b) 0.42 J/cm²; (c) 0.50 J/cm²; (d) 0.58 J/cm²

Fig. 6. Two-dimensional surface topographies of single-crystal silicon during single-line scanning under different energy densities. (a) Original surface; (b) 0.16 J/cm²; (c) 0.27 J/cm²; (d) 0.42 J/cm²; (e) 0.50 J/cm²; (f) 0.58 J/cm²

Fig. 7. Schematic diagram of Marangoni flow

Fig. 8. Two-dimensional surface topographies of single-crystal silicon under different beam overlap ratios when laser energy density is 0.50 J/cm². (a) 50.0%; (b) 62.5%; (c) 75.0%; (d) 87.5%

Fig. 9. Surface roughness of irradiated single-crystal silicon under different beam overlap ratios when laser energy density is 0.50 J/cm²

Fig. 10. Two-dimensional surface morphologies after second irradiation under different laser energy densities when beam overlap ratio is 75.0%. (a) 0.12 J/cm²; (b) 0.20 J/cm²; (c) 0.28 J/cm²; (d) 0.36 J/cm²

Fig. 11. Surface roughness after second irradiation under different laser energy densities when beam overlap ratio is 75.0%

Fig. 12. Original zone and irradiated zone and their cross-sectional profile curves. (a) Original zone and irradiated zone; (b) cross-sectional profile curve along line B direction in Fig. 12(a)