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Acta Physica Sinica, Volume. 68, Issue 24, 247203-1(2019)

Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor

Yan-Li Liu1, Wei Wang1, Yan Dong2, Dun-Jun Chen2、*, Rong Zhang2, and You-Dou Zheng2
Author Affiliations
  • 1School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China
  • 2School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
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    Yan-Li Liu, Wei Wang, Yan Dong, Dun-Jun Chen, Rong Zhang, You-Dou Zheng. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor[J]. Acta Physica Sinica, 2019, 68(24): 247203-1

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    Paper Information

    Received: Jul. 27, 2019

    Accepted: --

    Published Online: Sep. 17, 2020

    The Author Email:

    DOI:10.7498/aps.68.20191153

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