Fig. 1. Schematic of N-polar GaN/InAlN HEMT structure.N极性面GaN/InAlN HEMT结构示意图

Fig. 2. (a) Output characteristics, (b) transfer characteristics, and (c) transconductance curves of N-polar GaN/InAlN HEMTs with different GaN channel thicknesses.不同GaN沟道层厚度下, N极性面GaN/InAlN HEMT器件的(a) 输出特性、(b) 转移特性和(c) 跨导曲线

Fig. 3. (a) Conduction-band energy diagram and (b) electron distribution in N-polar GaN/InAlN HEMTs with different GaN channel thicknesses.不同GaN沟道层厚度下, N极性面GaN/InAlN HEMT器件栅极下方的(a)导带结构和(b)电子浓度分布图

Fig. 4. (a) Output characteristics, (b) transfer characteristics, and (c) transconductance curves of N-polar GaN/InAlN HEMTs with different InAlN back barrier thicknesses.不同InAlN背势垒层厚度下, N极性面GaN/InAlN HEMT器件的(a)输出特性、(b) 转移特性和(c)跨导曲线

Fig. 5. (a) Conduction-band energy diagram and (b) electron distribution in N-polar GaN/InAlN HEMTs with different InAlN back barrier thicknesses. The inset in panel (a) is the partial enlarged conduction-band energy of the rectangular quantum well.不同InAlN背势垒层厚度下, N极性面GaN/InAlN HEMT器件栅极下方的(a)导带结构(内插图为三角势阱处导带结构的局部放大图), 以及(b) 电子浓度分布图