Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering

Jingtao Zhu; Tao Zhou; Jie Zhu; Jiaoling Zhao; Hangyu Zhu

doi:10.3788/AOS202040.1431002

Acta Optica Sinica, Volume. 40, Issue 14, 1431002(2020)

Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering

Jingtao Zhu¹, Tao Zhou¹, Jie Zhu^1、*, Jiaoling Zhao^2,3, and Hangyu Zhu¹

Author Affiliations

¹School of Physical Science and Engineering, Tongji University, Shanghai 200092, China

²Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

³Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

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Figures & Tables(9)

Fig. 1. Schematic of stress measurement

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Fig. 2. Schematic of ω and 2θ

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$XRR test and fitting curves of Al and Si for Si-doped 50% (mass fraction) Al-Si composite film. (a) Al film; (b) Si film$

Fig. 3. XRR test and fitting curves of Al and Si for Si-doped 50% (mass fraction) Al-Si composite film. (a) Al film; (b) Si film

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Fig. 4. Curvature for Al-Si composite films

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Fig. 5. Stress for Al-Si composite films

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$X-ray diffraction patterns of Al-Si composite films$

Fig. 6. X-ray diffraction patterns of Al-Si composite films

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Table 1. XRR fitting results of Al and Si films in Al-Si composite film
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Table 1. XRR fitting results of Al and Si films in Al-Si composite film
Designed Si-doped mass fraction /% Al thickness /nm Si thickness /nm Measured Si-doped mass fraction /%
0 28.31 - 0
10 27.34 3.12 8.97
20 25.43 5.82 16.49
30 20.35 9.38 28.46
50 15.27 14.91 45.73

Table 2. Stress of Al-Si composite films
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Table 2. Stress of Al-Si composite films
Si-doped mass fraction /% Stress /MPa
0 -47.98
8.97 -35.91
16.49 -19.34
28.46 54.29
45.73 83.84

Table 3. Crystal orientation, diffraction peak position and grain size of Al-Si composite films
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Table 3. Crystal orientation, diffraction peak position and grain size of Al-Si composite films
Si-doped mass fraction /% Crystal orientation Diffraction peak position /(°) Grain size /nm
0 Al(111) 38.88 24.6
8.97 Al(111) 38.89 18.1
16.49 Al(111) 38.85 11.5
28.46 Al(111) 38.76 9.0
45.73 Al(111) 38.63 3.7

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Jingtao Zhu, Tao Zhou, Jie Zhu, Jiaoling Zhao, Hangyu Zhu. Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering[J]. Acta Optica Sinica, 2020, 40(14): 1431002

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