Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering

Jingtao Zhu; Tao Zhou; Jie Zhu; Jiaoling Zhao; Hangyu Zhu

doi:10.3788/AOS202040.1431002

Acta Optica Sinica, Volume. 40, Issue 14, 1431002(2020)

Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering

Jingtao Zhu¹, Tao Zhou¹, Jie Zhu^1、*, Jiaoling Zhao^2,3, and Hangyu Zhu¹

Author Affiliations

¹School of Physical Science and Engineering, Tongji University, Shanghai 200092, China

²Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

³Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

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Jingtao Zhu, Tao Zhou, Jie Zhu, Jiaoling Zhao, Hangyu Zhu. Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering[J]. Acta Optica Sinica, 2020, 40(14): 1431002

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Paper Information

Category: Thin Films

Received: Feb. 24, 2020

Accepted: Apr. 13, 2020

Published Online: Jul. 23, 2020

The Author Email: Zhu Jie (jzhu008@tongji.edu.cn)

DOI:10.3788/AOS202040.1431002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology