Chinese Journal of Lasers, Volume. 41, Issue 5, 502001(2014)

Accelerated Life Testing Model of Laser Diodes under Space Radiation Stress

Liu Yun1、*, Zhao Shanghong1, Yang Shengsheng2, Li Yongjun1, and Qiang Ruoxin1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less

    By analyzing the radiation impact mechanism in space ennironment, the irradiated performance degradation and the annealing effect during radiation are achieved. On the basis, accelerated life testing model under radiation stress is established, the expressions of failure time, accelerate factor, cumulative distribution function, probability density function and mean time to failure are obtained. Degradation datas under the stresses of 100, 50 and 10 Gy/s are simulated, and parameters in the accelerated life testing model are estimated. The failure time under normal radiation stress (0.03 Gy/s) is 43862 h. Basing on Weibull distribution and the simulated data under the stress of 50 Gy/s, both cumulative distribution function and mean time to failure of laser diodes are calculated, the mean time to failure is about 39755.8 h.

    Tools

    Get Citation

    Copy Citation Text

    Liu Yun, Zhao Shanghong, Yang Shengsheng, Li Yongjun, Qiang Ruoxin. Accelerated Life Testing Model of Laser Diodes under Space Radiation Stress[J]. Chinese Journal of Lasers, 2014, 41(5): 502001

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Laser physics

    Received: Nov. 4, 2013

    Accepted: --

    Published Online: Apr. 18, 2014

    The Author Email: Liu Yun (ikmnji@126.com)

    DOI:10.3788/cjl201441.0502001

    Topics