Semiconductor Optoelectronics, Volume. 46, Issue 4, 693(2025)

Simulation of Through-Silicon Via Design and Characteristics for High-Speed Optoelectronic Three-Dimensional Integration

XIE Han, WANG Pan, and TIAN Sijie
Author Affiliations
  • United Microelectronics Center Co Ltd, Chongqing 401332, CHN
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    References(14)

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    [4] [4] Lee Y J, Lim S K. Co-optimization and analysis of signal, power, and thermal interconnects in 3-D ICs[J]. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2011, 30(11): 1635-1648.

    [5] [5] Minami R, Han C, Matsushita K, et al. Effect of transmission line modeling using different de-embedding methods[C]//41st European Microwave Conference, 2011: 381-384.

    [6] [6] Wang R, Charles G, Franzon P. Modeling and compare of through-silicon-via (TSV) in high frequency[C]//IEEE International 3D Systems Integration Conference, 2012: 1-6.

    [7] [7] Gharib M A, Abdelzaher S, Partin-Vaisband I. An analytical model for high-frequency through silicon vias[C]//Proceedings of the Great Lakes Symposium on VLSI 2024. ACM, 2024: 282-286.

    [8] [8] Crupi G. Microwave De-Embedding From Theory to Applications[M]. Oxford: Academic Press, 2013.

    [9] [9] Song J, Ling F, Flynn G, et al. A de-embedding technique for interconnects[C]//IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging, 2001: 129-132.

    [10] [10] Kaan T K, Lim K, Kawai S, et al. Characterization of crossing transmission line using two-port measurements for millimeter-wave CMOS circuit design[J]. IEICE Transactions on Electronics, 2015, E98.C(1): 35-44.

    [11] [11] Chen Z, Xiong M, Li B, et al. Electrical characterization of coaxial silicon–insulator–silicon through-silicon vias: theoretical analysis and experiments[J]. IEEE Transactions on Electron Devices, 2016, 63(12): 4880-4887.

    [12] [12] Roger F, Kraft J, Molnar K, et al. TCAD electrical parameters extraction on Through Silicon Via (TSV) structures in a 0.35 m analog mixed-signal CMOS[C]//Simulation of Semiconductor Processes and Devices (SISPAD), 2012: 380-383.

    [13] [13] Wang F, Li H, Yu N. Fabrication and measurement of 3D LPF based on coaxial TSV[J]. Electronics Letters, 2019, 55(2): 102-103.

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    XIE Han, WANG Pan, TIAN Sijie. Simulation of Through-Silicon Via Design and Characteristics for High-Speed Optoelectronic Three-Dimensional Integration[J]. Semiconductor Optoelectronics, 2025, 46(4): 693

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    Paper Information

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    Received: Jul. 20, 2025

    Accepted: Sep. 18, 2025

    Published Online: Sep. 18, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.20250720002

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