Optoelectronic Technology, Volume. 40, Issue 4, 298(2020)

Performance and Stability Improvement of Back Channel Etched Indium?Gallium?Zinc Thin?film?transistor by Optimized Passivation Layer

Jiashun TAO and Xiang LIU
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  • Nanjing CEC Panda FPD Technology Co., Ltd., Nanjing 20033, CHN
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    Jiashun TAO, Xiang LIU. Performance and Stability Improvement of Back Channel Etched Indium?Gallium?Zinc Thin?film?transistor by Optimized Passivation Layer[J]. Optoelectronic Technology, 2020, 40(4): 298

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    Paper Information

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    Received: Aug. 28, 2020

    Accepted: --

    Published Online: Jan. 12, 2021

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2020.04.011

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