Properties of HfO<sub>2</sub>‐SiO<sub>2</sub> Mixed Coatings with Different Mixing Ratios

Dianfu Feng; Yun Cui; Chunxian Tao; Feng Yang; Ge Zhang; Xiaoyu Yang; Jianda Shao

doi:10.3788/CJL241030

Chinese Journal of Lasers, Volume. 52, Issue 6, 0603102(2025)

Properties of HfO₂‐SiO₂ Mixed Coatings with Different Mixing Ratios

Dianfu Feng², Yun Cui^1、*, Chunxian Tao^2、**, Feng Yang³, Ge Zhang¹, Xiaoyu Yang², and Jianda Shao⁴

¹Precision Optical Manufacturing and Testing Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201815, China

²School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China

³Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

⁴Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China

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Figures & Tables(12)

Fig. 1. Reflectivity curves of HfO₂-SiO₂ mixed film samples

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Fig. 2. Indentations of different HfO₂-SiO₂ mixed film samples. (a) Sample 1; (b) sample 2; (c) sample 3;(d) sample 4; (e) sample 5; (f) sample 6; (g) sample 7

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$Hardness and Young modulus of HfO2-SiO2 mixed film sample versus SiO2 atomic fraction$

Fig. 3. Hardness and Young modulus of HfO₂-SiO₂ mixed film sample versus SiO₂ atomic fraction

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Fig. 4. TEM characterization results of HfO₂ films. (a) HAADF image; (b) EDS image of Hf

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Fig. 5. GIXRD analysis results. (a) GIXRD patterns of samples 7 and 6; (b) GIXRD pattern of sample 7 before annealing; (c) GIXRD pattern of sample 6 before annealing; (d) GIXRD pattern of sample 6 after annealing

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Fig. 6. Mass spectra of sample 2 and sample 6. (a) Sample 2; (b) sample 6

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Fig. 7. Depth profile curves of $H f S i O_{2}^{+}$ in different samples

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$Hf binding energies in different samples. (a) Hf 4f spectra; (b) linear fitting of binding energy of Hf 4f7/2 versus HfO2 atomic fraction$

Fig. 8. Hf binding energies in different samples. (a) Hf 4f spectra; (b) linear fitting of binding energy of Hf 4f_7/2 versus HfO₂ atomic fraction

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$Si binding energies in different samples. (a) Si 2p spectra; (b) linear fitting of binding energy of Si 2p versus SiO2 atomic fraction$

Fig. 9. Si binding energies in different samples. (a) Si 2p spectra; (b) linear fitting of binding energy of Si 2p versus SiO₂atomic fraction

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$O binding energies in different samples. (a) O 1s spectra; (b) linear fitting of binding energy of O 1s versus SiO2 atomic fraction$

Fig. 10. O binding energies in different samples. (a) O 1s spectra; (b) linear fitting of binding energy of O 1s versus SiO₂ atomic fraction

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Table 1. Contents of SiO₂ and HfO₂ in HfO₂-SiO₂mixed films
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Table 1. Contents of SiO₂ and HfO₂ in HfO₂-SiO₂mixed films
Sample No.
Atomic fraction
of SiO₂ /%
Atomic fraction
of HfO₂ /%
Designed
value
Measured
value
Measured
value
1 100 100.0 0
2 83 83.2 16.8
3 67 68.4 31.6
4 50 58.0 42.0
5 33 38.0 62.0
6 17 13.0 87.0
7 0 0 100.0

Table 2. Fitted densities of HfO₂-SiO₂ mixed film samples
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Table 2. Fitted densities of HfO₂-SiO₂ mixed film samples
Sample No. 1 2 3 4 5 6 7
Atomic fraction of SiO₂ /% 100.0 83.2 68.4 58.0 38.0 13.0 0
Fitted density /（g/cm³） 2.0 3.9 4.6 5.7 6.8 8.1 7.4

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Dianfu Feng, Yun Cui, Chunxian Tao, Feng Yang, Ge Zhang, Xiaoyu Yang, Jianda Shao. Properties of HfO₂‐SiO₂ Mixed Coatings with Different Mixing Ratios[J]. Chinese Journal of Lasers, 2025, 52(6): 0603102

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