Journal of Semiconductors, Volume. 40, Issue 3, 032701(2019)

Photovoltaic properties of Cu2O-based heterojunction solar cells using n-type oxide semiconductor nano thin films prepared by low damage magnetron sputtering method

Toshihiro Miyata, Kyosuke Watanabe, Hiroki Tokunaga, and Tadatsugu Minami
Author Affiliations
  • Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Nonoichi, Ishikawa 921-8501, Japan
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    Figures & Tables(6)
    (Color online) Cross-sectional structure of AZO/p-Cu2O solar cell.
    (Color online) Typical J–V characteristics for AZO/p-Cu2O heterojunction solar cells prepared with different target-Cu2O sheet distances.
    (Color online) Conversion efficiency (η), fill factor (FF), VOC, and JSC as functions of target-Cu2O sheet distance for AZO/p-Cu2O heterojunction solar cells.
    (Color online) Typical J–V characteristics for AZO/p-Cu2O heterojunction solar cells prepared with different sputtering voltages: 380 and 700 V.
    (Color online) J–V characteristics measured under dark conditions obtained in AZO/p-Cu2O heterojunction solar cell shown in Fig. 4.
    (Color online) Typical J–V characteristics as a function of pre-sputtering time for AZO/p-Cu2O heterojunction solar cells.
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    Toshihiro Miyata, Kyosuke Watanabe, Hiroki Tokunaga, Tadatsugu Minami. Photovoltaic properties of Cu2O-based heterojunction solar cells using n-type oxide semiconductor nano thin films prepared by low damage magnetron sputtering method[J]. Journal of Semiconductors, 2019, 40(3): 032701

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    Paper Information

    Category: Articles

    Received: Jun. 15, 2018

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/3/032701

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