[1] J C Zhang, P F Dong, K Dang et al. Ultra-wide bandgap semiconductor Ga2O3 power diodes. Nat Commun, 13, 3900(2022).

[2] J Y Tsao, S Chowdhury, M A Hollis et al. Ultrawide-bandgap semiconductors: Research opportunities and challenges. Adv Elect Materials, 4, 1600501(2018).

[3] S J Pearton, J C Yang, P H Cary et al. A review of Ga2O3 materials, processing, and devices. Appl Phys Rev, 5, 011301(2018).

[4] K N Heinselman, D Haven, A Zakutayev et al. Projected cost of gallium oxide wafers from edge-defined film-fed crystal growth. Cryst Growth Des, 22, 4854(2022).

[5] X Lu, Y X Deng, Y L Pei et al. Recent advances in NiO/Ga2O3 heterojunctions for power electronics. J Semicond, 44, 061802(2023).

[6] G W Xu, F H Wu, Q Liu et al. Vertical β-Ga2O3 power electronics. J Semicond, 44, 070301(2023).

[7] J S Wei, Y Z Bu, Q L Sai et al. Effect of high-temperature remelting on the properties of Sn-doped β-Ga2O3 crystal grown using the EFG method. CrystEngComm, 25, 4317(2023).

[8] M A Mastro, A Kuramata, J Calkins et al. Perspective: Opportunities and future directions for Ga2O3. ECS J Solid State Sci Technol, 6, P356(2017).

[9] H Aida, K Nishiguchi, H Takeda et al. Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method. Jjap, 47, 8506(2008).

[10] E Ohba, T Kobayashi, T Taishi et al. Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method. J Cryst Growth, 556, 125990(2021).

[11] K Hoshikawa, E Ohba, T Kobayashi et al. Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air. J Cryst Growth, 447, 36(2016).

[12] Z Galazka. Growth of bulk β-Ga2O3 single crystals by the Czochralski method. J Appl Phys, 131, 0311, 03(2022).

[13] B Y Chen, W X Mu, Y Y Liu et al. Growth and characterization of the β-Ga2O3 (011) plane without line-shaped defects. CrystEngComm, 25, 2404(2023).

[14] P K Li, X L Han, D Y Chen et al. Controllability of β-Ga2O3 single crystal conductivity by V doping. CrystEngComm, 24, 5588(2022).

[15] Q Y Zhang, N Li, T Zhang et al. Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering. Nat Commun, 14, 418(2023).

[16] D Guo, Q Guo, Z Chen et al. Review of Ga2O3-based optoelectronic devices. Mater Today Phys, 11, 100157(2019).

[17] Y W Song, A Bhattacharyya, A Karim et al. Ultra-wide band gap Ga2O3-on-SiC MOSFETs. ACS Appl Mater Interfaces, 15, 7137(2023).

[18] M Singh, M A Casbon, M J Uren et al. Pulsed large signal RF performance of field-plated Ga2O3 MOSFETs. IEEE Electron Device Lett, 39, 1572(2018).

[19] N Moser, K Liddy, A Islam et al. Toward high voltage radio frequency devices in β-Ga2O3. Appl Phys Lett, 117, 242101(2020).

[20] W X Mu, Z T Jia, G Cittadino et al. Ti-doped β-Ga2O3: A promising material for ultrafast and tunable lasers. Cryst Growth Des, 18, 3037(2018).

[21] Y H Zhang, F Xing. Anisotropic optical and electric properties of β-gallium oxide. J Semicond, 44, 071801(2023).

[22] T C Lovejoy, E N Yitamben, N Shamir et al. Surface morphology and electronic structure of bulk single crystal β-Ga2O3 (100). Appl Phys Lett, 94, 1906(2009).

[23] V M Bermudez. The structure of low-index surfaces of β-Ga2O3. Chem Phys, 323, 193(2006).

[24] L Y Meng, D S Yu, H L Huang et al. MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates. Cryst Growth Des, 24, 3737(2024).

[25] A Nandi, D Cherns, I Sanyal et al. Epitaxial growth of (-201) β-Ga2O3 on (001) diamond substrates. Cryst Growth Des, 23, 8290(2023).

[26] Y Z Bu, Q L Sai, H J Qi. Stability of interfacial thermal balance in thick β-Ga2O3 crystal growth by EFG. J Cryst Growth, 612, 127194(2023).

[27] W X Mu, Z T Jia, Y R Yin et al. Solid-liquid interface optimization and properties of ultra-wide bandgap β-Ga2O3 grown by Czochralski and EFG methods. CrystEngComm, 21, 2762(2019).

[28] X Tang, B T Liu, Y Yu et al. Numerical analysis of difficulties of growing large-size bulk β-Ga2O3 single crystals with the czochralski method. Crystals, 11, 25(2021).

[29] A Kuramata, K Koshi, S Watanabe et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth. Jpn J Appl Phys, 55, 1202A2(2016).

[30] T Hou, W Y Zhang, W X Mu et al. The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal. Mater Sci Semicond Process, 158, 107357(2023).

[31] M Ge, Y Li, Y H Zhu et al. An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure. J Appl Phys, 130, 035703(2021).

[32] Y Z Yao, K Hirano, Y Sugawara et al. Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron X-ray topography. Apl Materials, 10, 051101(2022).

[33] O Ueda, M Kasu, H Yamaguchi. Structural characterization of defects in EFG- and HVPE-grown β-Ga2O3 crystals. Jpn J Appl Phys, 61, 050101(2022).

[34] Y Z Yao, Y Tsusaka, K Hirano et al. Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect X-ray topography. J Appl Phys, 134, 155104(2023).

[35] X C Ma, R Xu, J F Xu et al. In-plane crystalline anisotropy of bulk β-Ga2O3. J Appl Cryst, 54, 1153(2021).

[36] M G Wang, S Mu, J S Speck et al. First-principles study of twin boundaries and stacking faults in β-Ga2O3. Adv Materials Inter, 12, 2300318(2025).

[37] D Haven, H Moutinho, J S Mangum et al. Multimodal microscopy of extended defects in β-Ga2O3 (010) EFG crystals. AIP Advances, 13, 075122(2023).

[38] Y Gu, W W Wang, Y J Li et al. Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes. Nat Commun, 9, 1339(2018).

[39] B Lee, E Paek, D Mitlin et al. Sodium metal anodes: emerging solutions to dendrite growth. Chem Rev, 119, 5416(2019).

[40] C Z Li, Q Yuan, B Ni et al. Dendritic defect-rich palladium-copper-cobalt nanoalloys as robust multifunctional non-platinum electrocatalysts for fuel cells. Nat Commun, 9, 3702(2018).

[41] Y J Liu, S J Li, H L Wang et al. Microstructure, defects and mechanical behavior of beta-type titanium porous structures manufactured by electron beam melting and selective laser melting. Acta Mater, 113, 56(2016).

[42] M E Glicksman, A O Lupulescu. Dendritic crystal growth in pure materials. J Cryst Growth, 264, 541(2004).

[43] L Gránásy, T Pusztai, T Börzsönyi et al. A general mechanism of polycrystalline growth. Nature Mater, 3, 645(2004).

[44] X Y Dong, S J Yu, W X Mu et al. Solar-blind photodetectors prepared using semi-insulating Co: β-Ga2O3 single crystals that are stable over a wide temperature range. J Mater Chem C, 11, 8919(2023).