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Chinese Optics, Volume. 16, Issue 6, 1512(2023)

InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions

Cui-cui LIU1, Nan LIN2,3, Xiao-yu MA2,3、*, Yue-ming ZHANG4, and Su-ping LIU2
Author Affiliations
  • 1National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China
  • 2National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, CAS, Beijing 100083, China
  • 3College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
  • 4Hitachi High-tech Scientific Solutions (Beijing) Co., Ltd., Beijing 100012, China
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    [5] WANG Y X, ZHU L N, ZHONG L, et al. InGaAs/GaAs(P) quantum well intermixing induced by Si impurity diffusion[J]. Chinese Optics, 15, 426-432(2022).

    [6] LIU C C, LIN N, XIONG C, et al. Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities[J]. Chinese Optics, 13, 203-216(2020).

    [7] WALKER C L, BRYCE A C, MARSH J H. Improved catastrophic optical damage level from laser with nonabsorbing mirrors[J]. IEEE Photonics Technology Letters, 14, 1394-1396(2002).

    [8] WANG X, ZHAO Y H, ZHU L N, et al. Impurity-free vacancy diffusion induces quantum well intermixing in 915 nm semiconductor laser based on SiO2 film[J]. Acta Photonica Sinica, 47, 0314003(2018).

    [9] GE X H, ZHANG R Y, GUO CH Y, et al. Multiple factor ion implantation-induced quantum well intermixing effect[J]. Laser & Optoelectronics Progress, 57, 011409(2020).

    [10] LIN T, LI Y N, XIE J N, et al. Composition and interface research on quantum well intermixing between a tensile GaInP quantum well and compressed AlGaInP barriers[J]. Journal of Electronic Materials, 51, 4368-4377(2022).

    [11] LIN T, LI Y N, XIE J N, et al. Quantum well intermixing of tensile strain GaInP quantum well structures induced by ion implantation and thermal annealing[J]. Materials Science in Semiconductor Processing, 138, 106306(2022).

    [12] LAIDIG W D, HOLONYAK JR N, CAMRAS M D, et al. Disorder of an AlAs-GaAs superlattice by impurity diffusion[J]. Applied Physics Letters, 38, 776-778(1981).

    [13] KALISKI R W, GAVRILOVIC P, MEEHAN K, et al. Photoluminescence and stimulated emission in Si-and Ge-disordered AlxGa1-xAs-GaAs superlattices[J]. Journal of Applied Physics, 58, 101-107(1985).

    [14] MEI P, YOON H W, VENKATESAN T, et al. Kinetics of silicon-induced mixing of AlAs-GaAs superlattices[J]. Applied Physics Letters, 50, 1823-1825(1987).

    [15] LIAO M Y, LI W, TANG M CH, et al. Selective area intermixing of III-V quantum-dot lasers grown on silicon with two wavelength lasing emissions[J]. Semiconductor Science and Technology, 34, 085004(2019).

    [16] QIU B C, MARTIN H H, WANG W M, et al. Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers[J]. Chinese Optics, 11, 590-603(2018).

    [17] LI X, SHA Y Q, JIANG CH W, et al. Fabrication and characterization of ultra-thin GaN-based LED freestanding membrane[J]. Chinese Optics, 13, 873-883(2020).

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    Cui-cui LIU, Nan LIN, Xiao-yu MA, Yue-ming ZHANG, Su-ping LIU. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions[J]. Chinese Optics, 2023, 16(6): 1512

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    Paper Information

    Category: Original Article

    Received: Dec. 28, 2022

    Accepted: Sep. 21, 2023

    Published Online: Nov. 29, 2023

    The Author Email: Xiao-yu MA (maxy@semi.ac.cn)

    DOI:10.37188/CO.2022-0257

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