Chinese Optics, Volume. 16, Issue 6, 1512(2023)
InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions
Fig. 2. The PL spectrum of InGaAs/AlGaAs QW primary epitaxial wafer
Fig. 3. The relationship between relative interdiffusion coefficient and temperature
Fig. 4. Deformation results of primary epitaxial wafer simulated by COMSOL after annealing
Fig. 5. Surface morphology (a) with and (b) without epitaxial wafers after RTA
Fig. 6. Effect of RTA temperature on wavelength blue shift of primary epitaxial wafers
Fig. 7. Effect of RTA time on wavelength blue shift of primary epitaxial wafers
Fig. 8. Effect of different silicon layers on wavelength blue shift of primary epitaxial wafers
Fig. 9. Surface EDS results of element composition at different corrosion times of primary epitaxial wafers after 875 °C/90 s RTA. (a) Untreated sammple; (b) corrosion for 15 s; (c) corrosion for 30 s; (d) corrosion for 45 s
Table 1. [in Chinese]
View tableView in ArticleTable 1. [in Chinese]
Sample GaAs Si SiO2 Young's modulus(Pa) 8.50×1010 1.77×1011 7.31×1010 Poisson's ratio 0.31 0.2891 0.17 Density(kg/m3) 5500 2328 2203 Coefficient of thermal expansion(1/K) 6.40×10−6 2.60×10−6 5.50×10−7
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Cui-cui LIU, Nan LIN, Xiao-yu MA, Yue-ming ZHANG, Su-ping LIU. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions[J]. Chinese Optics, 2023, 16(6): 1512
Category: Original Article
Received: Dec. 28, 2022
Accepted: Sep. 21, 2023
Published Online: Nov. 29, 2023
The Author Email: Xiao-yu MA (maxy@semi.ac.cn)
