A convolution approach for the epilayer thickness in liquid phase epitaxial growth

Yan-Feng WEI; Quan-Zhi SUN

doi:10.11972/j.issn.1001-9014.2021.02.004

Journal of Infrared and Millimeter Waves, Volume. 40, Issue 2, 161(2021)

A convolution approach for the epilayer thickness in liquid phase epitaxial growth

Yan-Feng WEI^* and Quan-Zhi SUN

Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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Figures & Tables(3)

Fig. 1. The schematic phase-diagram used in the LPE growth model

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Fig. 2. The relation between temperature and the time in a LPE process

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Fig. 3. LPE layer thickness versus 3/2 power of growth time.

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Yan-Feng WEI, Quan-Zhi SUN. A convolution approach for the epilayer thickness in liquid phase epitaxial growth[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 161

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Paper Information

Category: Research Articles

Received: May. 28, 2020

Accepted: --

Published Online: Aug. 31, 2021

The Author Email: Yan-Feng WEI (yfwei@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2021.02.004

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology