Properties of Ta<sub>2</sub>O<sub>5 </sub>Monolayer Film Based on Ion Source Bias Voltage Regulation

Lin Wang; Weili Zhang; Ruijin Hong; Kun Wang; Menglei Wang; Qinmin Wang; Hao Liu

doi:10.3788/CJL250475

Chinese Journal of Lasers, Volume. 52, Issue 11, 1103102(2025)

Properties of Ta₂O₅Monolayer Film Based on Ion Source Bias Voltage Regulation

Lin Wang^1,2, Weili Zhang^1、*, Ruijin Hong², Kun Wang¹, Menglei Wang¹, Qinmin Wang^1,3, and Hao Liu^1,2

¹Thin Film Optics Laboratory, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

²School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China

³School of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan , China

show less

Abstract Get PDF(in Chinese)

Figures & Tables(20)

Fig. 1. Transmission spectra of Ta₂O₅ films deposited at different APS bias voltages

Download full size

$Optical constants of Ta2O5 films deposited at different APS bias voltages. (a) Refractive index; (b) extinction coefficient$

Fig. 2. Optical constants of Ta₂O₅ films deposited at different APS bias voltages. (a) Refractive index; (b) extinction coefficient

Download full size

Fig. 3. Weak absorption at 1064 nm of Ta₂O₅ films deposited at different APS bias voltages

Download full size

Fig. 4. Continuous laser irradiation temperature rise test platform

Download full size

Fig. 5. Thermal camera monitoring results for the surface temperature distributions of Ta₂O₅ films deposited at different APS bias voltages. (a) 120 V; (b) 130 V; (c) 140 V; (d) 150 V

Download full size

Fig. 6. Temperature rise values for samples in groups A‒D at different irradiation power densities

Download full size

Fig. 7. COMSOL simulated deformation distributions on the surface of deposited films at different APS bias voltages. (a) 120 V; (b) 130 V; (c) 140 V; (d) 150 V

Download full size

Fig. 8. XPS spectra of Ta₂O₅ films deposited at different APS bias voltages

Download full size

Fig. 9. XRD pattern of Ta₂O₅ films deposited at different APS bias voltages

Download full size

Fig. 10. AFM images of Ta₂O₅ films deposited at different APS bias voltages

Download full size

Fig. 11. Surface roughness and K_TIS of Ta₂O₅ films deposited at different APS bias voltages

Download full size

Fig. 12. Surface shapes of Ta₂O₅ films deposited at different APS bias voltages

Download full size

Fig. 13. Residual stress in Ta₂O₅ films deposited at different APS bias voltages

Download full size

Table 1. Process parameters of Ta₂O₅monolayer film deposition
View table
Table 1. Process parameters of Ta₂O₅monolayer film deposition
Group
APS bias
voltage /V
Discharge
current /A
APS O₂ flow
rate /sccm
A 120 50 35
B 130 50 35
C 140 50 35
D 150 50 35

Table 2. Parameters for continuous laser irradiation temperature rise testing
View table
Table 2. Parameters for continuous laser irradiation temperature rise testing
Wavelength /nm Irradiation time /s Spot area /mm² Laser power /W Laser power density /（kW/cm²）
1064 60 1
78
157
236
316
346
8
16
24
32
35

Table 3. Simulation parameters used in thermal distortion model

View table

Table 3. Simulation parameters used in thermal distortion model

Name	Parameter value	Description
t_JGS1	5×10⁶nm	Base thickness
$t_{T a_{2} O_{5}}$	1500 nm	Film thickness
R_sample	25 mm	Sample radius
R_laser	0.56 mm	Radius of the incident light spot
a_JGS1	0	Base absorption coefficient
$a_{T a_{2} O_{5}}$	5×10^-6	Film absorption coefficient
D_{P.density_laser}	35 kW/cm²	Incident light power density
T₀	293 K	Initial ambient temperature

Table 4. Material simulation parameters

View table

Table 4. Material simulation parameters

Parameter	Value
Parameter	Fused quart	Ta₂O₅ film
Density /（kg/m³）	2201	7600
Thermal conductivity /［ W/（m‧K）］	1.34	2.6
Constant pressure heat capacity / ［J/（kg‧K）］	670	500
Thermal expansion coefficient /K^-1	0.58×10^-6	2.36×10^-6
Young’s modulus /Pa	7.27×10¹⁰	27×10¹⁰
Poisson’s ratio	0.17	0.34

Table 5. Contents of C, O, and Ta elements as well as the atomic ratio of O to Ta in Ta₂O₅ films deposited at different APS bias voltages
View table
Table 5. Contents of C, O, and Ta elements as well as the atomic ratio of O to Ta in Ta₂O₅ films deposited at different APS bias voltages
APS bias voltage /V Atomic fraction /% Atomic ratio of O to Ta
C O Ta
120 3.23 68.94 27.84 2.48
130 3.29 69.06 27.65 2.50
140 4.23 68.05 27.72 2.45
150 5.90 67.00 27.10 2.47

Table 6. Total integrated scattering K_TIS of Ta₂O₅ films deposited at different APS bias voltages
View table
Table 6. Total integrated scattering K_TIS of Ta₂O₅ films deposited at different APS bias voltages
APS bias voltage /V K_TIS
120 2.66×10^-4
130 6.56×10^-5
140 1.09×10^-4
150 1.18×10^-4

Table 7. Substrate deflection before and after Ta₂O₅ films deposition at different APS bias voltages and the residual stress in the films
View table
Table 7. Substrate deflection before and after Ta₂O₅ films deposition at different APS bias voltages and the residual stress in the films
APS bias
voltage /V
Substrate deflection /nm
Residual
stress /MPa
After deposition Before deposition
120 97.1 16.5 77.6
130 40.0 10.3 28.2
140 34.6 8.2 25.4
150 -30.6 12.5 -41.3

Tools

Get Citation

Copy Citation Text

Lin Wang, Weili Zhang, Ruijin Hong, Kun Wang, Menglei Wang, Qinmin Wang, Hao Liu. Properties of Ta₂O₅Monolayer Film Based on Ion Source Bias Voltage Regulation[J]. Chinese Journal of Lasers, 2025, 52(11): 1103102

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Thin Films

Received: Jan. 17, 2025

Accepted: Mar. 14, 2025

Published Online: Jun. 9, 2025

The Author Email: Weili Zhang (wlzhang@siom.ac.cn)

DOI:10.3788/CJL250475

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Process parameters of Ta2O5 monolayer film deposition

Table 1. Process parameters of Ta2O5 monolayer film deposition

Table 2. Parameters for continuous laser irradiation temperature rise testing

Table 2. Parameters for continuous laser irradiation temperature rise testing

Table 3. Simulation parameters used in thermal distortion model

Table 3. Simulation parameters used in thermal distortion model

Table 4. Material simulation parameters

Table 4. Material simulation parameters

Table 5. Contents of C, O, and Ta elements as well as the atomic ratio of O to Ta in Ta2O5 films deposited at different APS bias voltages

Table 5. Contents of C, O, and Ta elements as well as the atomic ratio of O to Ta in Ta2O5 films deposited at different APS bias voltages

Table 6. Total integrated scattering KTIS of Ta2O5 films deposited at different APS bias voltages

Table 6. Total integrated scattering KTIS of Ta2O5 films deposited at different APS bias voltages

Table 7. Substrate deflection before and after Ta2O5 films deposition at different APS bias voltages and the residual stress in the films

Table 7. Substrate deflection before and after Ta2O5 films deposition at different APS bias voltages and the residual stress in the films

Table 1. Process parameters of Ta₂O₅monolayer film deposition

Table 1. Process parameters of Ta₂O₅monolayer film deposition

Table 5. Contents of C, O, and Ta elements as well as the atomic ratio of O to Ta in Ta₂O₅ films deposited at different APS bias voltages

Table 5. Contents of C, O, and Ta elements as well as the atomic ratio of O to Ta in Ta₂O₅ films deposited at different APS bias voltages

Table 6. Total integrated scattering K_TIS of Ta₂O₅ films deposited at different APS bias voltages

Table 6. Total integrated scattering K_TIS of Ta₂O₅ films deposited at different APS bias voltages

Table 7. Substrate deflection before and after Ta₂O₅ films deposition at different APS bias voltages and the residual stress in the films

Table 7. Substrate deflection before and after Ta₂O₅ films deposition at different APS bias voltages and the residual stress in the films