As Moore's Law gradually approaches its physical limits, the development of electronic devices toward "smaller, thinner, and more precise" dimensions simultaneously imposes higher demands on advanced packaging technologies. Glass substrates have gained significant favor among domestic and foreign enterprises and research institutions due to their advantages, including excellent high-frequency application performance, a flexibly tunable coefficient of thermal expansion (CTE), low cost, and the ready availability of large-size ultra-thin glass substrates. The metallization process, serving as a critical step in through-glass vias (TGVs), determines the electrical connection performance of integrated chips. Currently, TGV metallization is primarily implemented using physical vapor deposition (PVD) technology. However, the high cost, slow deposition rates, and poor effectiveness of PVD in processing high-aspect-ratio blind and through-holes have drawn widespread attention to wet processes for TGV metallization. Addressing this, the deposition mechanism of TGV electroless plating is elaborated upon, recent research advances and key technologies for enhancing adhesion strength between the electroless plated layer and the glass substrate are reviewed, while insights into future development directions are also provided.