High Power Laser and Particle Beams, Volume. 35, Issue 5, 051001(2023)

Study of packaging in master oscillator power amplifier diode laser chip

Pengfei Xie1,2, Jun Lei1,2, Yonggang Zhang1,2, Chengqian Wang1,2, Wenqiang Lü1,2, Zhao Wang1,2, Weichuan Du1,2, and Songxin Gao1,2
Author Affiliations
  • 1Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang 621900, China
  • 2Institute of Applied Electronics, CAEP, Mianyang 621900, China
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    Figures & Tables(10)
    Schematic of the MOPA diode laser[8]
    Model of MOPA diode laser chip and packaging of the chip
    Curve of Tj in P-side up and N side with heat sink
    Curve of Tj between P-down and P-side up with heat spreader submount
    Curve of Tj in two different structures with P-side up
    Curve of Tj as submount dimension changes
    Picture of real product
    Test picture of MOPA diode laser and curve of P-I
    Spectrum of the MOPA diode laser in CW mode and the spectrum in different current
    • Table 1. Material parameters

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      Table 1. Material parameters

      materialthermal conductivity/(W·m−1·K−1) coefficient of thermal expansion/(10−6 K−1) thickness/μmwidth/mm
      GaAs556.41201.0
      AlN2304.55004.5
      W90Cu101804.51000~30002.0~4.5
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    Pengfei Xie, Jun Lei, Yonggang Zhang, Chengqian Wang, Wenqiang Lü, Zhao Wang, Weichuan Du, Songxin Gao. Study of packaging in master oscillator power amplifier diode laser chip[J]. High Power Laser and Particle Beams, 2023, 35(5): 051001

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    Paper Information

    Category: High Power Laser Physics and Technology

    Received: Jul. 27, 2022

    Accepted: Feb. 22, 2023

    Published Online: May. 6, 2023

    The Author Email:

    DOI:10.11884/HPLPB202335.220235

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