Laser & Optoelectronics Progress, Volume. 57, Issue 3, 032202(2020)
High-Precision ITO Electrode Wet Etching Technology Based on Maskless Lithography
Fig. 1. Diagram of production process. (a) Pouring; (b) spin coating; (c) exposure; (d) development; (e) etching; (f) removing glue
Fig. 2. Morphologies of photoresist after different development time. (a) 25 s; (b) 30 s; (c) 35 s
Fig. 3. Electrode morphologies after different etching time. (a) 180 s; (b) 210 s; (c) 240 s
Fig. 4. Comparison of photoresist morphologies with different sizes after development. (a) 200 μm; (b) 100 μm; (c) 50 μm; (d) 20 μm; (e) 10 μm; (f) 2 μm
Fig. 5. Comparison of electrode effects with different size after glue removal. (a) 200 μm; (b) 100 μm; (c) 50 μm; (d) 20 μm; (e) 10 μm; (f) 2 μm
Fig. 7. Cross-sectional shape curves of 2 μm electrode and glass substrate under atomic force microscope
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Yi Yin, Zhijian Liu, Saijie Wang, Sen Wu, Zhijun Yan, Xinxiang Pan. High-Precision ITO Electrode Wet Etching Technology Based on Maskless Lithography[J]. Laser & Optoelectronics Progress, 2020, 57(3): 032202
Category: Optical Design and Fabrication
Received: Jun. 11, 2019
Accepted: Aug. 12, 2019
Published Online: Feb. 17, 2020
The Author Email: Zhijian Liu (liuzhijian@dlmu.edu.cn)