Researching | Dual-phase coexistence enables to alleviate resistance drift in phase-change films

Journal of Semiconductors, Volume. 45, Issue 7, 072303(2024)

Dual-phase coexistence enables to alleviate resistance drift in phase-change films

Tong Wu¹, Chen Chen¹, Jinyi Zhu¹, Guoxiang Wang^1,2、*, and Shixun Dai^1,2

Author Affiliations

¹Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China

²Institute of Ocean Engineering, Ningbo University, Ningbo 315211, China

show less

Full Text Get PDF

Figures&Tables (4)

References (21)

Paper Information

References(21)

[1] K Ding, J Wang, Y Zhou et al. Phase-change heterostructure enables ultralow noise and drift for memory operation. Science, 366, 210(2019).

[2] W Zhang, R Mazzarello, M Wuttig et al. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing. Nat Rev Mater, 4, 150(2019).

[3] J Zhao, W X Song, T Xin et al. Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials. Nat Commun, 12, 1(2021).

[4] M Xu, M Xu, X S Miao. Deep Machine learning unravels the structural origin of mid-gap states in chalcogenide glass for high-density memory integration. InfoMat, 4, e12315(2022).

[5] M Xu, Q D Xu, R C Gu et al. Tailoring mid-gap states of chalcogenide glass by pressure-induced hypervalent bonding towards the design of electrical switching materials. Adv Funct Mater, 33, 2304926(2023).

[6] J Luckas, A Piarristeguy, G Bruns et al. Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys. J Appl Phys, 113, 023704(2013).

[7] W Zhang, E Ma. Unveiling the structural origin to control resistance drift in phase-change memory materials. Mater Today, 41, 156(2020).

[8] B Liu, K Li, W Liu et al. Multi-level phase-change memory with ultralow power consumption and resistance drift. Sci Bull, 66, 2217(2021).

[9] M Boniardi, D lelmini, S Lavizzari et al. Statistics of resistance drift due to structural relaxation in phase-change memory arrays. IEEE Trans Electron Dev, 57, 2690(2010).

[10] C Li, C Hu, J Wang et al. Understanding phase change materials with unexpectedly low resistance drift for phase-change memories. J Mater Chem C, 6, 3387(2018).

[11] C Chen, J Zhu, Y Chen et al. Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices. J Alloys Compd, 892, 162148(2022).

[12] L Zhou, Z Yang, X Wang et al. Resistance drift suppression utilizing GeTe/Sb2Te3 superlattice-like phase-change materials. Adv Electron Mater, 6, 1900781(2020).

[13] F Rao, Z Song, M J Xia et al. High speed phase change memory based on SnTe-doped Ge2Sb2Te5 material. Electrochem Solid State Lett, 15, 59(2011).

[14] S Ebrahimi, B Yarmand, N Naderi. Effect of the sulfur concentration on the optical band gap energy and Urbach tail of spray-deposited ZnS films. Adv Ceram Prog, 3, 6(2017).

[15] K Wang, D Wamwangi, S Ziegler et al. Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5. Phys Status Solidi A, 201, 3087(2004).

[16] S Sohila, M Rajalakshmi, C Ghosh et al. Optical and Raman scattering studies on SnS nanoparticles. J Alloys Compd, 509, 5843(2011).

[17] Y Lu, S Song, X Shen et al. Phase change characteristics of Sb-rich Ga−Sb−Se materials. J Alloys Compd, 586, 669(2014).

[18] J Vidal, S Lany, M d’Avezac et al. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Appl Phys Lett, 100, 032104(2012).

[19] P Fantini, S Brazzelli, E Cazzini et al. Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films. Appl Phys Lett, 100, 013505(2012).

[20] R Lan, S L Otoo, P Yuan et al. Thermoelectric properties of Sn doped GeTe thin films. Appl Surf Sci, 507, 145025(2020).

[21] Y Gu, S Song, Z Song et al. SixSb2Te materials with stable phase for phase change random access memory applications. J Appl Phys, 111, 054319(2012).

Tools

Get Citation

Copy Citation Text

Tong Wu, Chen Chen, Jinyi Zhu, Guoxiang Wang, Shixun Dai. Dual-phase coexistence enables to alleviate resistance drift in phase-change films[J]. Journal of Semiconductors, 2024, 45(7): 072303

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Apr. 9, 2024

Accepted: --

Published Online: Jul. 18, 2024

The Author Email: Guoxiang Wang (GXWang)

DOI:10.1088/1674-4926/24040013

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology