Fig. 1. (Color online) (a) Relationship between sheet resistance and annealing temperature at heating rate of 30 °C/min. (b) Plot of failure time versus reciprocal temperature and (c) sheet resistance as a function of time for SnS-doped GST films at 50 °C for up to 10³ s.

Fig. 2. (Color online) (a) Plot of (αhν)^1/2 vs. hν for pure GST and SnS-doped GST samples. (b) Relationship between electrical conductivity and the reciprocal temperature for amorphous GST and SnS-doped GST films.

Fig. 3. (Color online) X-ray diffraction patterns of as-deposited and annealed (a) (SnS)_8.8(GST)_91.2, (b) (SnS)_35.1(GST)_64.9, and (c) (SnS)_54.6(GST)_45.4 films.

Fig. 4. (Color online) Raman scattering spectra of as-deposited and annealed (a) pure SnS, (b) (SnS)_8.8(GST)_91.2, (c) (SnS)_35.1(GST)_64.9, and (d) (SnS)_54.6(GST)_45.4, respectively.