[1] [1] The application of infrared LED. 2008, http://www.ledinside.com/knowledge/2008/8/the_application_of_infrared_LED

[2] [2] Camin D V, Valerio G. Cryogenic behavior of optoelectronic devices for the transmission of analog signals via fiber optics. IEEE Transactions on Nuclear Science, 2006, 53(6): 3929–3933

[3] [3] Manik N B, Basu A N, Mukherjee S C. Characterisation of the photodetector and light emitting diode at above liquid nitrogen temperature. Cryogenics, 2000, 40(4): 341–344

[4] [4] Losacco G, Dominique G. Components update: qualification of a IR LED device for optical encoders for space applications. ISROS, 1–5 October 2012– Poster Session

[5] [5] Hudait M K, Modak P, Krupanidhi S B. Si incorporation and Burstein–Moss shift in n-type GaAs. Materials Science and Engineering B, 1999, 60(1): 1–11

[6] [6] Wilson J, Hawker J F B. Optoelectronics – An Introduction. 2nd ed. India: Prentice-Hall of India Private Limited, 1999, 132–133

[7] [7] Hudait M K, Modak P, Rao K S R K, Krupanidh S B. Low temperature photoluminescence properties of Zn-doped GaAs. Materials Science and Engineering B, 1998, 57(1): 62–70

[8] [8] Yan D W, Lu H, Chen D J, Zhang R, Zheng Y D. Forward tunneling current in GaN-based blue light-emitting diodes. Applied Physics Letters, 2010, 96(8): 083504-1–083504-3

[9] [9] Casey H C, Muth J, Krishnankutty S, Zavada J M. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes. Applied Physics Letters, 1996, 68(20): 2867–2869

[10] [10] Eliseev P G, Perlin P, Furioli J, Sartori P, Mu J, Osinski M. Tummeling current and electroluminescence in InGaN:Zn, Si/AlGaN/GaN blue light emitting diodes. Journal of Electronic Materials, 1997, 26(3): 311–319

[11] [11] Zemel A, Eger D.Tunneling current in PbTe-Pb0.8Sn0.2Te heterojunctions. Solid-Slate Electronics, 1980, 23(11): 1123–1126

[12] [12] Sarusi G, Zemel A, Sher A, Eger D. Forward tunneling current in HgCdTe photodiodes. Journal of Applied Physics, 1994, 76(7): 4420–4425

[13] [13] Dalapati P, Manik N B, Basu A N. Effect of temperature on intensity and carrier lifetime of an AlGaAs based red light emitting diode. Journal of Semiconductors, 2013, 34(9): 092001-1–092001-5

[14] [14] Reynolds C L, Patel A. Tunneling entity in different injection regimes of InGaN light emitting diodes. Journal of Applied Physics, 2008, 103(8): 086102-1–086102-2

[15] [15] Morgan T N. Recombination by tunneling in electroluminescent diodes. Physical Review, 1966, 148(2): 890–903

[16] [16] Wolfe CM, Stillman G E, Dimmock J O. Ionized impurity density in n-type GaAs. Journal of Applied Physics, 1970, 41(2): 504–507

[17] [17] Guo W L, Jia X J, Yin F, Cui B F, Gao W, Liu Y, Yan W W. Characteristics of high power LEDs at high and low temperature. Journal of Semiconductors, 2011, 32(4): 044007-1–044007-3

[18] [18] Schubert E F. Light Emitting Diodes. San Diego: Cambridge University Press, 2003, 80

[19] [19] Ozgur G. The effective mass theory. 2003, http://lyle.smu.edu/ee/smuphotonics/Gain/CoursePresentationFall03/Effective_-Mass_Theory_July25-03.pdf

[20] [20] Kittel C. Introduction to Solid State Physics. 7th ed. Singapore: John Wiley & Sons (Asia) Pre. Ltd., 2004, 214