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Frontiers of Optoelectronics, Volume. 7, Issue 4, 501(2014)

Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

Pradip DALAPATI, Nabin Baran MANIK*, and Asok Nath BASU
Author Affiliations
  • Condensed Matter Physics Research Center, Department of Physics, Jadavpur University, Kolkata 700032, India
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    Pradip DALAPATI, Nabin Baran MANIK, Asok Nath BASU. Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter[J]. Frontiers of Optoelectronics, 2014, 7(4): 501

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    Paper Information

    Category: RESEARCH ARTICLE

    Received: Sep. 26, 2013

    Accepted: Dec. 23, 2013

    Published Online: Jan. 27, 2015

    The Author Email: Nabin Baran MANIK (nbm_juphysics@yahoo.co.in)

    DOI:10.1007/s12200-014-0379-5

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology