Chinese Journal of Lasers, Volume. 46, Issue 4, 0403002(2019)
Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film
Fig. 1. XRD patterns of AZO film annealed at different temperatures (the illustration shows the change of FWHM of ZnO (101) crystal face with annealing temperature)
Fig. 2. AFM images of AZO thin film annealed at different temperatures. (a) Unannealed sample; (b) annealed at 300 ℃; (c) annealed at 400 ℃; (d) annealed at 500 ℃; (e) annealed at 600 ℃
Fig. 3. Carrier concentration and mobility ratio of AZO thin films as a function of annealing temperature
Fig. 4. Absorption spectra of AZO thin film annealed at different temperatures (the illustration shows the optical bandgap of AZO thin samples)
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Deshuang Guo, Zinan Chen, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Fengyuan Lin, Xinwei Wang, Zhipeng Wei. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002
Category: materials and thin films
Received: Nov. 19, 2018
Accepted: Jan. 8, 2019
Published Online: May. 9, 2019
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