Chinese Journal of Lasers, Volume. 46, Issue 4, 0403002(2019)

Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film

Deshuang Guo1、*, Zinan Chen1, Dengkui Wang1、*, Jilong Tang1, Xuan Fang1, Dan Fang1, Fengyuan Lin1, Xinwei Wang2, and Zhipeng Wei1
Author Affiliations
  • 1 State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2 School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    Figures & Tables(4)
    XRD patterns of AZO film annealed at different temperatures (the illustration shows the change of FWHM of ZnO (101) crystal face with annealing temperature)
    AFM images of AZO thin film annealed at different temperatures. (a) Unannealed sample; (b) annealed at 300 ℃; (c) annealed at 400 ℃; (d) annealed at 500 ℃; (e) annealed at 600 ℃
    Carrier concentration and mobility ratio of AZO thin films as a function of annealing temperature
    Absorption spectra of AZO thin film annealed at different temperatures (the illustration shows the optical bandgap of AZO thin samples)
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    Deshuang Guo, Zinan Chen, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Fengyuan Lin, Xinwei Wang, Zhipeng Wei. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002

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    Paper Information

    Category: materials and thin films

    Received: Nov. 19, 2018

    Accepted: Jan. 8, 2019

    Published Online: May. 9, 2019

    The Author Email:

    DOI:10.3788/CJL201946.0403002

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