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Chinese Journal of Lasers, Volume. 46, Issue 4, 0403002(2019)

Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film

Deshuang Guo1、*, Zinan Chen1, Dengkui Wang1、*, Jilong Tang1, Xuan Fang1, Dan Fang1, Fengyuan Lin1, Xinwei Wang2, and Zhipeng Wei1
Author Affiliations
  • 1 State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2 School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    Article index updated: Mar. 11, 2025

    The article is cited by 6 article(s) CLP online library. (Some content might be in Chinese.)
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    Deshuang Guo, Zinan Chen, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Fengyuan Lin, Xinwei Wang, Zhipeng Wei. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002

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    Paper Information

    Category: materials and thin films

    Received: Nov. 19, 2018

    Accepted: Jan. 8, 2019

    Published Online: May. 9, 2019

    The Author Email:

    DOI:10.3788/CJL201946.0403002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology