Journal of Synthetic Crystals, Volume. 54, Issue 5, 801(2025)
Effect of Heater Structure on Oxygen Impurities in Lightly Phosphorus-Doped Czochralski Monocrystalline Silicon with Ultra-Low Oxygen Content
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Fig. 2. Two-dimensional model and the corresponding grid division of the furnace structure composed of a conventional heater （a） and a split heater （b）
Fig. 3. Schematic diagram of conventional heater （a） and split heater （b）
Fig. 5. Cloud （a） and vector （b） plot of the velocity of silicon melt when the rod length is 300 mm
Fig. 6. Crystal rod temperature gradient diagram under different heaters when the rod length is 300 mm
Fig. 7. Cloud （a） and vector （b） plot of the velocity of silicon melt at 600 mm rod length
Fig. 8. Crystal rod temperature gradient diagram under different heaters when the rod length is 600 mm
Table 1.
Physical properties of silicon melt View tableView in ArticleTable 1.
Physical properties of silicon melt Physical property Value Density/（kg·m-3） 2 520 Coefficient of thermal expansion/K-1 1.4×10-4 Melting temperature/K 1 685 Dynamic viscosity/（kg·m-1·s-1） 7.6×10-4 Emissivity 0.33
Table 2.
Simulation and experimental process conditions View tableView in ArticleTable 2.
Simulation and experimental process conditions Parameter Value Crystal rotation/（r·min-1） 5 Crucible rotation/（r·min-1） 0.5 Pulling rate/（mm·min-1） 0.5 Argon flow rate/slm 120 Furnace pressure/kPa 8 Magnetic field intensity/T 0.25
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Runlong SHANG, Ya CHEN, Yang RUI, Liguang WANG, Cheng MA, Ran YI, Shaolin YANG. Effect of Heater Structure on Oxygen Impurities in Lightly Phosphorus-Doped Czochralski Monocrystalline Silicon with Ultra-Low Oxygen Content[J]. Journal of Synthetic Crystals, 2025, 54(5): 801
Paper Information
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Received: Dec. 20, 2024
Accepted: --
Published Online: Jul. 2, 2025
The Author Email: Shaolin YANG (slyang@nun.edu.cn)
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