[1] Feldmann F, Bivour M, Reichel C et al. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics[J]. Solar Energy Materials and Solar Cells, 120, 270-274(2014).

[2] Richter A, Müller R, Benick J et al. Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses[J]. Nature Energy, 6, 429-438(2021).

[3] Gunkel F, Christensen D V, Chen Y Z et al. Oxygen vacancies: the (in) visible friend of oxide electronics[J]. Applied Physics Letters, 116, 120505(2020).

[4] Feldmann F, Bivour M, Reichel C et al. Tunnel oxide passivated contacts as an alternative to partial rear contacts[J]. Solar Energy Materials and Solar Cells, 131, 46-50(2014).

[5] Feldmann F, Simon M, Bivour M et al. Efficient carrier-selective p- and n-contacts for Si solar cells[J]. Solar Energy Materials and Solar Cells, 131, 100-104(2014).

[6] Tao Y G, Madani K, Cho E et al. High-efficiency selective boron emitter formed by wet chemical etch-back for n-type screen-printed Si solar cells[J]. Applied Physics Letters, 110, 021101(2017).

[7] Lancaster K, Großer S, Feldmann F et al. Study of pinhole conductivity at passivated carrier-selected contacts of silicon solar cells[J]. Energy Procedia, 92, 116-121(2016).

[8] Peibst R, Römer U, Larionova Y et al. Working principle of carrier selective poly-Si/c-Si junctions: is tunnelling the whole story?[J]. Solar Energy Materials and Solar Cells, 158, 60-67(2016).

[9] Tetzlaff D, Krügener J, Larionova Y et al. A simple method for pinhole detection in carrier selective POLO-junctions for high efficiency silicon solar cells[J]. Solar Energy Materials and Solar Cells, 173, 106-110(2017).

[10] Wietler T F, Tetzlaff D, Krügener J et al. Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide[J]. Applied Physics Letters, 110, 253902(2017).

[11] Lan Z X, Wang Y L, Zhao L et al. Effect of ultrathin silicon oxide and titanium nitride composite layer on photogenerated electron export[J]. Acta Optica Sinica, 42, 1331002(2022).

[12] Feldmann F, Nogay G, Löper P et al. Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent J-V measurements[J]. Solar Energy Materials and Solar Cells, 178, 15-19(2018).

[13] Hofmann K, Rubloff G W, McCorkle R A. Defect formation in thermal SiO2 by high-temperature annealing[J]. Applied Physics Letters, 49, 1525-1527(1986).

[14] Feng M M, Zeng Y H, Yang Z H et al. Rapid-thermal-annealing-induced passivation degradation and recovery of polysilicon passivated contact with czochralski and cast multicrystalline silicon substrates[J]. Physica Status Solidi (a), 218, 2100344(2021).

[15] Rodrı́guez R, Miranda E, Pau R et al. Relation between defect generation, stress induced leakage current and soft breakdown in thin (<5 nm) oxides[J]. Microelectronics Reliability, 40, 707-710(2000).

[16] Moldovan A, Feldmann F, Zimmer M et al. Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers[J]. Solar Energy Materials and Solar Cells, 142, 123-127(2015).

[17] Stodolny M K, Lenes M, Wu Y et al. n-type polysilicon passivating contact for industrial bifacial n-type solar cells[J]. Solar Energy Materials and Solar Cells, 158, 24-28(2016).

[18] Feldmann F, Reichel C, Müller R et al. The application of poly-Si/SiOx contacts as passivated top/rear contacts in Si solar cells[J]. Solar Energy Materials and Solar Cells, 159, 265-271(2017).

[19] Yan D, Cuevas A, Bullock J et al. Phosphorus-diffused polysilicon contacts for solar cells[J]. Solar Energy Materials and Solar Cells, 142, 75-82(2015).

[20] Römer U, Peibst R, Ohrdes T et al. Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions[J]. Solar Energy Materials and Solar Cells, 131, 85-91(2014).

[21] Chen D, Hamer P G, Kim M et al. Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon[J]. Solar Energy Materials and Solar Cells, 185, 174-182(2018).

[22] Stangl R, Leendertz C, Haschke J. Numerical simulation of solar cells and solar cell characterization methods: the open-source on demand program AFORS-HET[M]. Solar energy(2010).

[23] Liu Y M, Ahmadpour M, Adam J et al. Modeling multijunction solar cells by nonlocal tunneling and subcell analysis[J]. IEEE Journal of Photovoltaics, 8, 1363-1369(2018).

[24] Tessler N, Vaynzof Y. Insights from device modeling of perovskite solar cells[J]. ACS Energy Letters, 5, 1260-1270(2020).

[25] Yan D, Cuevas A. Empirical determination of the energy band gap narrowing in highly doped n+ silicon[J]. Journal of Applied Physics, 114, 044508(2013).

[26] Haug H, Greulich J, Kimmerle A et al. PC1Dmod 6.1‒state-of-the-art models in a well-known interface for improved simulation of Si solar cells[J]. Solar Energy Materials and Solar Cells, 142, 47-53(2015).

[27] Richter A, Glunz S W, Werner F et al. Improved quantitative description of Auger recombination in crystalline silicon[J]. Physical Review B, 86, 165202(2012).

[28] Sugiura T, Matsumoto S, Nakano N. Numerical analysis of p-type and n-type based carrier-selective contact solar cells with tunneling oxide thickness and bulk properties[J]. Japanese Journal of Applied Physics, 59, SGGF03(2020).

[29] Klaassen D B M. A unified mobility model for device simulation—I. Model equations and concentration dependence[J]. Solid-State Electronics, 35, 953-959(1992).

[30] Folchert N, Peibst R, Brendel R. Modeling recombination and contact resistance of poly-Si junctions[J]. Progress in Photovoltaics: Research and Applications, 28, 1289-1307(2020).

[31] Feldmann F, Schön J, Niess J et al. Studying dopant diffusion from poly-Si passivating contacts[J]. Solar Energy Materials and Solar Cells, 200, 109978(2019).

[32] Zhang Z, Zeng Y H, Jiang C S et al. Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells[J]. Solar Energy Materials and Solar Cells, 187, 113-122(2018).

[33] Tsu R, Esaki L. Tunneling in a finite superlattice[J]. Applied Physics Letters, 22, 562-564(1973).

[34] Suzuki E, Schroder D K, Hayashi Y. Carrier conduction in ultrathin nitrided oxide films[J]. Journal of Applied Physics, 60, 3616-3621(1986).

[35] Han P, Jin K J, Lu H B et al. The mechanism study on transport properties in perovskite oxide p-n junctions[J]. Applied Physics Letters, 91, 182102(2007).

[36] Specht M, Städele M, Jakschik S et al. Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics[J]. Applied Physics Letters, 84, 3076-3078(2004).

[37] Rana F, Tiwari S, Buchanan D A. Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides[J]. Applied Physics Letters, 69, 1104-1106(1996).

[38] Gehring A, Selberherr S. Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices[J]. IEEE Transactions on Device and Materials Reliability, 4, 306-319(2004).

[39] Lee W C, Hu C M. Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling[J]. IEEE Transactions on Electron Devices, 48, 1366-1373(2001).

[40] Steinkemper H, Feldmann F, Bivour M et al. Numerical simulation of carrier-selective electron contacts featuring tunnel oxides[J]. IEEE Journal of Photovoltaics, 5, 1348-1356(2015).

[41] Ghetti A, Sangiorgi E, Sorsch T W et al. The role of native traps on the tunneling characteristics of ultra-thin (1.5‒3 nm) oxides[J]. Microelectronic Engineering, 48, 31-34(1999).

[42] Folchert N, Rienäcker M, Yeo A A et al. Temperature-dependent contact resistance of carrier selective poly-Si on oxide junctions[J]. Solar Energy Materials and Solar Cells, 185, 425-430(2018).

[43] Guo X Q, Liao M D, Rui Z et al. Comparison of different types of interfacial oxides on hole-selective p+-poly-Si passivated contacts for high-efficiency c-Si solar cells[J]. Solar Energy Materials and Solar Cells, 210, 110487(2020).