Fig. 1. Energy band diagram of n⁺-poly-Si/SiO_x/n-c-Si structure

Fig. 2. I-V characteristic curve for n-type POLO junction with oxide layer thickness of 1.4 nm

Fig. 3. Curves of current density J versus voltage V at different σ_tN_t for oxide layer thicknesses of 0.6‒2.6 nm. (a) 0.6 nm; (b) 1.0 nm; (c) 1.4 nm; (d) 1.8 nm; (e) 2.2 nm; (f) 2.6 nm

Fig. 4. Dependence of contact resistivity ρ_c on oxide layer thickness d_ox at different σ_tN_t

Fig. 5. Dependence of contact resistivity ρ_c and oxide layer potential drop V_ox on diffusion length parameter δ at different peak impurity concentrations. (a)‒(c) Dependence of contact resistivity ρ_c on diffusion length parameter δ when the oxide layer thickness is 0.6, 1.4, and 2.2 nm; (b) dependence of oxide layer potential drop V_ox on diffusion length parameter δ for an external bias voltage of 0.1 V with oxide layer thickness of 1.4 nm

Fig. 6. Dependence of contact resistivity ρ_c and oxide layer potential drop V_ox on peak impurity concentration C_p. (a) Dependence of contact resistivity ρ_c on peak impurity concentration C_p when the thickness of the oxide layer is 0.6, 1.2, and 1.8 nm; (d) dependence of oxide layer potential drop V_ox on peak impurity concentration C_p for bias voltage of 0.1 V with oxide layer thickness of 1.2 nm