Fig. 1. Schematic diagram and optical microscope image of PdSe₂/InSe vertical heterostructure

Fig. 2. Electrical properties of PdSe₂. (a) Relationship between gate voltage and drain current; (b) relationship between drain voltage and drain current

Fig. 3. Electron and hole mobility and on/off ratio of PdSe₂ devices measured at room temperature in relation to wafer thickness

Fig. 4. I-V characteristics of PdSe₂/InSe van der Waals heterostructures at different gate voltages

Fig. 5. Comparison of reverse rectifier ratio of different reverse diodes made from traditional massive materials Si, GaAs, and GaN with two-dimensional heterogeneous structures WSe₂/SnSe₂, MoS₂/BP, and WSe₂/MoS₂^[21-23]

Fig. 6. AFM and KPFM images of the junction barrier at van der Waals heterojunction interface of PdSe₂/InSe

Fig. 7. Material thickness

Fig. 8. Work function of the junction

Fig. 9. Band distribution of Au, InSe, and PdSe₂ before contact

Fig. 10. I-V characteristics and energy band diagrams of PdSe₂/InSe van der Waals heterojunction devices with different bias voltages and gate voltages. (a) I-V characteristics of PdSe₂/InSe van der Waals heterojunction devices at -100、100 V gate voltages; (b) energy band diagrams of devices at -100 V gate voltage; (c) energy band diagrams of devices at 100 V gate voltage

Fig. 11. Output characteristics of PdSe₂/InSe under different laser intensities

Fig. 12. Time resolved optical response of the device under 520 nm laser irradiation at V_ds=-1 V