Laser & Optoelectronics Progress, Volume. 60, Issue 13, 1316019(2023)

High-Performance van der Waals Heterotunneling Device Based on PdSe2/InSe

Kexue Sun1,2、*, Jianglin Li1, Zefeng Chen3, Jianbin Xu4, and Qiang Zhao1
Author Affiliations
  • 1College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, China
  • 2Nation-Local Joint Project Engineering Laboratory of RF Integration & Micropackage, Nanjing 210023, Jiangsu, China
  • 3School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, Jiangsu, China
  • 4Electronics Engineering Department, The Chinese University of Hong Kong, Hong Kong 999077, China
  • show less
    Cited By

    Article index updated: Sep. 7, 2025

    The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)
    Tools

    Get Citation

    Copy Citation Text

    Kexue Sun, Jianglin Li, Zefeng Chen, Jianbin Xu, Qiang Zhao. High-Performance van der Waals Heterotunneling Device Based on PdSe2/InSe[J]. Laser & Optoelectronics Progress, 2023, 60(13): 1316019

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Materials

    Received: Jan. 3, 2023

    Accepted: Mar. 7, 2023

    Published Online: Jun. 29, 2023

    The Author Email: Kexue Sun (sunkx@njupt.edu.cn)

    DOI:10.3788/LOP230432

    Topics