[1] [1] ZHA X H, WAN Y X, LI S, et al. Rhodium-alloyed beta gallium oxide materials: new type ternary ultra-wide bandgap semiconductors[J]. Advanced Electronic Materials, 2025, 11(1): 2570002.

[2] [2] FU B, MU W X, ZHANG J, et al. A study on the technical improvement and the crystalline quality optimization of columnar -Ga2O3 crystal growth by an EFG method[J]. CrystEngComm, 2020, 22(30): 5060-5066.

[3] [3] OISHI T, KOGA Y, HARADA K, et al. High-mobility - Ga2O3(-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact[J]. Applied Physics Express, 2015, 8(3): 031101.

[4] [4] HE Q M, MU W X, DONG H, et al. Schottky barrier diode based on -Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics[J]. Applied Physics Letters, 2017, 110(9): 093503.

[5] [5] KURAMATA A, KOSHI K, WATANABE S, et al. High-quality -Ga2O3 single crystals grown by edge-defined film-fed growth[J]. Japanese Journal of Applied Physics, 2016, 55(12): 1202A2.

[6] [6] KURAMATA A, KOSHI K, WATANABE S, et al. Bulk crystal growth of Ga2O3[C]//Oxide-based Materials and Devices IX. January 27-February 1, 2018. San Francisco, USA. SPIE, 20188, 10533: 105330E.

[7] [7] PEARTON S J, YANG J C, CARY P H, et al. A review of Ga2O3 materials, processing, and devices[J]. Applied Physics Reviews, 2018, 5(1): 011301.

[8] [8] ZHANG J Y, SHI J L, QI D C, et al. Recent progress on the electronic structure, defect, and doping properties of Ga2O3[J]. APL Materials, 2020, 8(2): 020906.

[9] [9] WANG Z P, CHEN X H, REN F F, et al. Deep-level defects in gallium oxide[J]. Journal of Physics D Applied Physics, 2021, 54(4): 043002.

[10] [10] GALAZKA Z, GANSCHOW S, FIEDLER A, et al. Doping of Czochralski-grown bulk -Ga2O3 single crystals with Cr, Ce and Al[J]. Journal of Crystal Growth, 2018, 486: 82-90.

[11] [11] GALAZKA Z, SCHEWSKI R, IRMSCHER K, et al. Bulk -Ga2O3 single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiation[J]. Journal of Alloys and Compounds, 2020, 818: 152842.

[12] [12] GALAZKA Z, IRMSCHER K, SCHEWSKI R, et al. Czochralski-grown bulk -Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions[J]. Journal of Crystal Growth, 2020, 529: 125297.

[13] [13] HANY I, YANG G, CHUNG C C. Fast X-ray detectors based on bulk -Ga2O3 (Fe)[J]. Journal of Materials Science, 2020, 55(22): 9461-9469.

[14] [14] INGEBRIGTSEN M E, VARLEY J B, KUZNETSOV A Y, et al. Iron and intrinsic deep level states in Ga2O3[J]. Applied Physics Letters, 2018, 112(4): 042104.

[15] [15] HE H, LI W, XING H Z, et al. First principles study on the electronic properties of Cr, Fe, Mn and Ni doped -Ga2O3[J]. Advanced Materials Research, 2012, 535/536/537: 36-41.

[16] [16] ZENG H, WU M, GAO H X, et al. Role of native defects in Fe-doped -Ga2O3[J]. Materials, 2023, 16(20): 6758.

[17] [17] ZHANG K, XU Z W, ZHAO J L, et al. Temperature-dependent Raman and photoluminescence of -Ga2O3 doped with shallow donors and deep acceptors impurities[J]. Journal of Alloys and Compounds, 2021, 881: 160665.

[18] [18] NOMURA T, OKUMURA K, MIYAKE H, et al. AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE[J]. Journal of Crystal Growth, 2012, 350(1): 69-71.