Preparation and Properties of 3~4 Inch Fe Doped &#946;-Ga<sub>2</sub>O<sub>3</sub> Single Crystal with High Resistance

HUO Xiaoqing; ZHANG Shengnan; ZHOU Jinjie; WANG Yingmin; CHENG Hongjuan; SUN Qisheng

doi:10.16553/j.cnki.issn1000-985x.2025.0010

Journal of Synthetic Crystals, Volume. 54, Issue 3, 407(2025)

Preparation and Properties of 3~4 Inch Fe Doped β-Ga₂O₃ Single Crystal with High Resistance

HUO Xiaoqing, ZHANG Shengnan, ZHOU Jinjie, WANG Yingmin, CHENG Hongjuan^*, and SUN Qisheng

CETC Key Laboratory of Advanced Semiconductor Crystal Materials and Technologies, The 46th Research Institute, CETC, Tianjin 300220, China

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HUO Xiaoqing, ZHANG Shengnan, ZHOU Jinjie, WANG Yingmin, CHENG Hongjuan, SUN Qisheng. Preparation and Properties of 3~4 Inch Fe Doped β-Ga₂O₃ Single Crystal with High Resistance[J]. Journal of Synthetic Crystals, 2025, 54(3): 407

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Paper Information

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Received: Jan. 13, 2025

Accepted: Apr. 23, 2025

Published Online: Apr. 23, 2025

The Author Email: CHENG Hongjuan (xiemn08@126.com)

DOI:10.16553/j.cnki.issn1000-985x.2025.0010

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology