Investigation of Single Event Transient Effects in InP-based HEMT

Microelectronics, Volume. 55, Issue 1, 21(2025)

SUN Shuxiang^1,2, LI Haoyu^1,2, and ZHANG Xin^1,2

Author Affiliations

¹School of Electronic Information, Huanghuai University, Zhumadian Henan 463000, P. R. China

²Henan Key Laboratory of Smart Lighting, Zhuhumadian Henan 463000, P. R. China

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SUN Shuxiang, LI Haoyu, ZHANG Xin. Investigation of Single Event Transient Effects in InP-based HEMT[J]. Microelectronics, 2025, 55(1): 21

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Paper Information

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Received: May. 8, 2024

Accepted: Jun. 19, 2025

Published Online: Jun. 19, 2025

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